Abstract
Alterations of device characteristics as a result of γ-ray irradiation of quantum well lasers are different from those of heterostructure bulk lasers with respect to optical emission properties. We propose that these irradiation effects may be caused by structural changes in the quantum layers, due to an atomic displacement and migration between layers and due to changes in the degree of strain between the layers. This affects the layers' atomic composition, which changes the band-gap energy levels and the refraction indexes, and, as a result, the carrier and optical confinements, respectively. The changes in optical radiation characteristics brought about by γ-ray irradiation are desirable ones for utilization in most optical fiber communication systems.
| Original language | English |
|---|---|
| Pages (from-to) | 629-631 |
| Number of pages | 3 |
| Journal | Radiation Physics and Chemistry |
| Volume | 63 |
| Issue number | 3-6 |
| DOIs | |
| State | Published - 25 Mar 2002 |
Keywords
- Laser diode
- Quantum-well
- γ-irradiation
ASJC Scopus subject areas
- Radiation