Abstract
Solid-state broadband lasers emitting in the 2-4-μm region are of interest for a variety of applications. However, conventional lasers for these wavelengths have limitations, such as the complexity and cryogenic operation. Recently, alternative materials for the mid-IR lasers - Cr2+-doped II-VI chalcogenide crystals - have been proposed. The RT mid-IR absorption in these crystals is due to the effective Cr2+ intracenter transitions. We present the results of an investigation of the CdSexS 1-x:Cr2+ crystals. The crystals were grown from the CdSe source by seeded physical vapor transport in the helium atmosphere with a wafer of CdSexS1-x as a seed. A CrSe source was used for the growth-time doping. The changing sulfur content along the growth axis was determined by energy dispersive x-ray microanalysis. An absorption peak in the IR range of 1.5-2.2 μm due to the Cr2+ intracenter transition 5T2 → 5E of ions was revealed. The maximum peak absorption was determined to be 4.5 cm-1. The concentration of the Cr2+ ions in the samples calculated from the IR absorption was found to vary from 1×1017 to 3×1018 cm -3. With the sulfur content, the intracenter absorption peak shifts to shorter wavelengths.
Original language | English |
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Article number | 594612 |
Pages (from-to) | 1-6 |
Number of pages | 6 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5946 |
DOIs | |
State | Published - 1 Dec 2005 |
Event | Optical Materials and Applications - Tartu, Estonia Duration: 6 Jul 2004 → 9 Jul 2004 |
Keywords
- Crystal growth
- Doping
- II-VI semiconductor compounds
- Intracenter optical transition
- Optical properties
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering