Optical study of CdSexS1-x crystals doped with Cr

Vladimir Kasiyan, Zinovi Dashevsky, Roni Shneck, Yuri Korostelin, Alexander Landman

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Solid-state broadband lasers emitting in the 2-4-μm region are of interest for a variety of applications. However, conventional lasers for these wavelengths have limitations, such as the complexity and cryogenic operation. Recently, alternative materials for the mid-IR lasers - Cr2+-doped II-VI chalcogenide crystals - have been proposed. The RT mid-IR absorption in these crystals is due to the effective Cr2+ intracenter transitions. We present the results of an investigation of the CdSexS 1-x:Cr2+ crystals. The crystals were grown from the CdSe source by seeded physical vapor transport in the helium atmosphere with a wafer of CdSexS1-x as a seed. A CrSe source was used for the growth-time doping. The changing sulfur content along the growth axis was determined by energy dispersive x-ray microanalysis. An absorption peak in the IR range of 1.5-2.2 μm due to the Cr2+ intracenter transition 5T25E of ions was revealed. The maximum peak absorption was determined to be 4.5 cm-1. The concentration of the Cr2+ ions in the samples calculated from the IR absorption was found to vary from 1×1017 to 3×1018 cm -3. With the sulfur content, the intracenter absorption peak shifts to shorter wavelengths.

Original languageEnglish
Article number594612
Pages (from-to)1-6
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1 Dec 2005
EventOptical Materials and Applications - Tartu, Estonia
Duration: 6 Jul 20049 Jul 2004


  • Crystal growth
  • Doping
  • II-VI semiconductor compounds
  • Intracenter optical transition
  • Optical properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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