Abstract
We report the first realization on nonplanar patterned substrates of optically active three-dimensionally confined semiconductor volumes created in situ via a one-step molecular beam epitaxial growth. Growth is carried out on pyramidal mesas on (111)B substrates and in a regime that results in the emergence of three equivalent {110} side facets which overtake the as-patterned {100} side facets and lead to mesa pinch-off. Transmission electron microscopy along with spatially and spectrally resolved cathodoluminescence provide evidence for emission from laterally confined regions with lateral linear dimensions ≲100 nm.
Original language | English |
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Pages (from-to) | 2905-2907 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 63 |
Issue number | 21 |
DOIs | |
State | Published - 1 Dec 1993 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)