Optically active three-dimensionally confined structures realized via molecular beam epitaxical growth on nonplanar GaAs (111)B

K. C. Rajkumar; A. Madhukar; K. Rammohan; D. H. Rich; P. Chen; L. Chen

doi:10.1063/1.110268

Optically active three-dimensionally confined structures realized via molecular beam epitaxical growth on nonplanar GaAs (111)B

K. C. Rajkumar, A. Madhukar, K. Rammohan, D. H. Rich, P. Chen, L. Chen

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

We report the first realization on nonplanar patterned substrates of optically active three-dimensionally confined semiconductor volumes created in situ via a one-step molecular beam epitaxial growth. Growth is carried out on pyramidal mesas on (111)B substrates and in a regime that results in the emergence of three equivalent {110} side facets which overtake the as-patterned {100} side facets and lead to mesa pinch-off. Transmission electron microscopy along with spatially and spectrally resolved cathodoluminescence provide evidence for emission from laterally confined regions with lateral linear dimensions ≲100 nm.

Original language	English
Pages (from-to)	2905-2907
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	21
DOIs	https://doi.org/10.1063/1.110268
State	Published - 1 Dec 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.110268

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abstract = "We report the first realization on nonplanar patterned substrates of optically active three-dimensionally confined semiconductor volumes created in situ via a one-step molecular beam epitaxial growth. Growth is carried out on pyramidal mesas on (111)B substrates and in a regime that results in the emergence of three equivalent {110} side facets which overtake the as-patterned {100} side facets and lead to mesa pinch-off. Transmission electron microscopy along with spatially and spectrally resolved cathodoluminescence provide evidence for emission from laterally confined regions with lateral linear dimensions ≲100 nm.",

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AU - Rajkumar, K. C.

AU - Madhukar, A.

AU - Rammohan, K.

AU - Rich, D. H.

AU - Chen, P.

AU - Chen, L.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - We report the first realization on nonplanar patterned substrates of optically active three-dimensionally confined semiconductor volumes created in situ via a one-step molecular beam epitaxial growth. Growth is carried out on pyramidal mesas on (111)B substrates and in a regime that results in the emergence of three equivalent {110} side facets which overtake the as-patterned {100} side facets and lead to mesa pinch-off. Transmission electron microscopy along with spatially and spectrally resolved cathodoluminescence provide evidence for emission from laterally confined regions with lateral linear dimensions ≲100 nm.

AB - We report the first realization on nonplanar patterned substrates of optically active three-dimensionally confined semiconductor volumes created in situ via a one-step molecular beam epitaxial growth. Growth is carried out on pyramidal mesas on (111)B substrates and in a regime that results in the emergence of three equivalent {110} side facets which overtake the as-patterned {100} side facets and lead to mesa pinch-off. Transmission electron microscopy along with spatially and spectrally resolved cathodoluminescence provide evidence for emission from laterally confined regions with lateral linear dimensions ≲100 nm.

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Optically active three-dimensionally confined structures realized via molecular beam epitaxical growth on nonplanar GaAs (111)B

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