Optically active three-dimensionally confined structures realized via molecular beam epitaxical growth on nonplanar GaAs (111)B

K. C. Rajkumar, A. Madhukar, K. Rammohan, D. H. Rich, P. Chen, L. Chen

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

We report the first realization on nonplanar patterned substrates of optically active three-dimensionally confined semiconductor volumes created in situ via a one-step molecular beam epitaxial growth. Growth is carried out on pyramidal mesas on (111)B substrates and in a regime that results in the emergence of three equivalent {110} side facets which overtake the as-patterned {100} side facets and lead to mesa pinch-off. Transmission electron microscopy along with spatially and spectrally resolved cathodoluminescence provide evidence for emission from laterally confined regions with lateral linear dimensions ≲100 nm.

Original languageEnglish
Pages (from-to)2905-2907
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number21
DOIs
StatePublished - 1 Dec 1993
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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