Optimization of noise and responsivity in CMOS active pixel sensors for detection of ultra low light levels

Orly Yadid-Pecht; Barmak Mansoorian; Eric R. Fossum; Bedabrata Pain

doi:10.1117/12.275185

Optimization of noise and responsivity in CMOS active pixel sensors for detection of ultra low light levels

Orly Yadid-Pecht, Barmak Mansoorian, Eric R. Fossum, Bedabrata Pain

Research output: Contribution to journal › Conference article › peer-review

50 Scopus citations

Abstract

In this paper, we present results of the investigation of the design and operation of CMOS active pixel sensors for detection of ultra-low light levels. We present a detailed noise model of APS pixel and signal chain. Utilizing the noise model, we have developed APS pixel designs that can achieve ultra-low noise and high responsivity. We present results from two test chips, that indicate (1) that less than 5 electrons of read noise is possible with CMOS APS by reducing the size of the pixel transistors, and (2) that high responsivity can be achieved when the fill-factor of the photodiode is reduced.

Original language	English
Pages (from-to)	125-136
Number of pages	12
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3019
DOIs	https://doi.org/10.1117/12.275185
State	Published - 25 Apr 1997
Externally published	Yes
Event	Solid State Sensor Arrays: Development and Applications 1997 - San Jose, United States Duration: 8 Feb 1997 → 14 Feb 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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abstract = "In this paper, we present results of the investigation of the design and operation of CMOS active pixel sensors for detection of ultra-low light levels. We present a detailed noise model of APS pixel and signal chain. Utilizing the noise model, we have developed APS pixel designs that can achieve ultra-low noise and high responsivity. We present results from two test chips, that indicate (1) that less than 5 electrons of read noise is possible with CMOS APS by reducing the size of the pixel transistors, and (2) that high responsivity can be achieved when the fill-factor of the photodiode is reduced.",

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AU - Yadid-Pecht, Orly

AU - Mansoorian, Barmak

AU - Fossum, Eric R.

AU - Pain, Bedabrata

PY - 1997/4/25

Y1 - 1997/4/25

N2 - In this paper, we present results of the investigation of the design and operation of CMOS active pixel sensors for detection of ultra-low light levels. We present a detailed noise model of APS pixel and signal chain. Utilizing the noise model, we have developed APS pixel designs that can achieve ultra-low noise and high responsivity. We present results from two test chips, that indicate (1) that less than 5 electrons of read noise is possible with CMOS APS by reducing the size of the pixel transistors, and (2) that high responsivity can be achieved when the fill-factor of the photodiode is reduced.

AB - In this paper, we present results of the investigation of the design and operation of CMOS active pixel sensors for detection of ultra-low light levels. We present a detailed noise model of APS pixel and signal chain. Utilizing the noise model, we have developed APS pixel designs that can achieve ultra-low noise and high responsivity. We present results from two test chips, that indicate (1) that less than 5 electrons of read noise is possible with CMOS APS by reducing the size of the pixel transistors, and (2) that high responsivity can be achieved when the fill-factor of the photodiode is reduced.

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VL - 3019

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EP - 136

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Solid State Sensor Arrays: Development and Applications 1997

Y2 - 8 February 1997 through 14 February 1997

ER -

Optimization of noise and responsivity in CMOS active pixel sensors for detection of ultra low light levels

Abstract

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