Abstract
In this paper, we present results of the investigation of the design and operation of CMOS active pixel sensors for detection of ultra-low light levels. We present a detailed noise model of APS pixel and signal chain. Utilizing the noise model, we have developed APS pixel designs that can achieve ultra-low noise and high responsivity. We present results from two test chips, that indicate (1) that less than 5 electrons of read noise is possible with CMOS APS by reducing the size of the pixel transistors, and (2) that high responsivity can be achieved when the fill-factor of the photodiode is reduced.
| Original language | English |
|---|---|
| Pages (from-to) | 125-136 |
| Number of pages | 12 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3019 |
| DOIs | |
| State | Published - 25 Apr 1997 |
| Externally published | Yes |
| Event | Solid State Sensor Arrays: Development and Applications 1997 - San Jose, United States Duration: 8 Feb 1997 → 14 Feb 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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