Optimization of surface morphology to reduce the effect of grain boundaries and contact resistance in small molecule based thin film transistors

Grain boundaries in organic thin film have been controlled by engineering the different growth conditions in such a way that it reduces the contact resistance and enhances the carrier mobility in p-type copper phthalocyanine and n-type copper hexadecafluoro phthalocyanine based organic thin film transistors. Reduced effect of grain boundary has been demonstrated by temperature dependence of charge carrier mobility and other transport parameters. A correlation has been established between contact resistance and certain thin film morphology, achieved by varying different growth conditions.