Optoelectranic diodes and CCDs in vacuum

S. Hava; N. S. Kopeìka

doi:10.1117/12.968178

Optoelectranic diodes and CCDs in vacuum

S. Hava, N. S. Kopeìka

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Electrical and optical properties of light-emitting diodes and photodiodes can change significantly in vacuum. These changes involve alterations in forward and reverse current-voltage and capacitance-reverse voltage characteristics, time response, spectral characteristics, quantum efficiency, diode ideality factor, etc. Here, attention is centered on alterations in electrical properties of imaging CCDs in vacuum. Such alterations include increased dark signal, increased responsivity at longer wavelengths in particular, and non-linearity of response.

Original language	English
Pages (from-to)	76-79
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	842
DOIs	https://doi.org/10.1117/12.968178
State	Published - 1 Dec 1987

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.968178

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title = "Optoelectranic diodes and CCDs in vacuum",

abstract = "Electrical and optical properties of light-emitting diodes and photodiodes can change significantly in vacuum. These changes involve alterations in forward and reverse current-voltage and capacitance-reverse voltage characteristics, time response, spectral characteristics, quantum efficiency, diode ideality factor, etc. Here, attention is centered on alterations in electrical properties of imaging CCDs in vacuum. Such alterations include increased dark signal, increased responsivity at longer wavelengths in particular, and non-linearity of response.",

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N2 - Electrical and optical properties of light-emitting diodes and photodiodes can change significantly in vacuum. These changes involve alterations in forward and reverse current-voltage and capacitance-reverse voltage characteristics, time response, spectral characteristics, quantum efficiency, diode ideality factor, etc. Here, attention is centered on alterations in electrical properties of imaging CCDs in vacuum. Such alterations include increased dark signal, increased responsivity at longer wavelengths in particular, and non-linearity of response.

AB - Electrical and optical properties of light-emitting diodes and photodiodes can change significantly in vacuum. These changes involve alterations in forward and reverse current-voltage and capacitance-reverse voltage characteristics, time response, spectral characteristics, quantum efficiency, diode ideality factor, etc. Here, attention is centered on alterations in electrical properties of imaging CCDs in vacuum. Such alterations include increased dark signal, increased responsivity at longer wavelengths in particular, and non-linearity of response.

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DO - 10.1117/12.968178

M3 - Conference article

AN - SCOPUS:84881062354

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Optoelectranic diodes and CCDs in vacuum

Abstract

ASJC Scopus subject areas

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