Optoelectronic mixing in a self oscillating InP/GaInAs photo - heterojunction bipolar transistor

J. Lasri, A. Bilenca, G. Eisenstein, D. Ritter, M. Orenstein

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

We describe optoelectronic mixing in self-oscillating multi frequency InP/InGaAs photo-heterojunction bipolar transistors. Base-band analog or digital data carried by optical signal impinging on the base is imprinted simultaneously on all RF spectral lines.

Original languageEnglish
Pages (from-to)1825-1828
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume3
StatePublished - 11 Dec 2000
Externally publishedYes
EventProceedings of the 1999 IEEE MTT-S International Microwave Symposium - Boston, MA, USA
Duration: 11 Jun 200016 Jun 2000

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