TY - JOUR
T1 - Oriented Attachment
T2 - A Path to Columnar Morphology in Chemical Bath Deposited PbSe Thin Films
AU - Templeman, Tzvi
AU - Sengupta, Sucheta
AU - Maman, Nitzan
AU - Bar-Or, Eyal
AU - Shandalov, Michael
AU - Ezersky, Vladimir
AU - Yahel, Eyal
AU - Sarusi, Gabby
AU - Visoly-Fisher, Iris
AU - Golan, Yuval
N1 - Funding Information:
Expert assistance from Dr. D. Mogilyanski (XRD), Dr. S. Hazan (FTIR), Dr. Dror Horovitz, and Dr. L. Li (FIB sample preparation) is gratefully acknowledged. Special thanks to Ora Ben-Arush for graphic assistance in Figure 7. This work has been partially supported by the Pazy Foundation and by the Israel Science Foundation under Grant 156/14.
Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/2/7
Y1 - 2018/2/7
N2 - We have studied columnar PbSe thin films obtained using chemical bath deposition. The columnar microstructure resulted from an oriented attachment growth mechanism, in which nuclei precipitating from solution attached along preferred crystallographic facets to form highly oriented, size-quantized columnar grains. This is shown to be an intermediate growth mechanism between the ion-by-ion and cluster growth mechanisms. A structural zone model depicting the active growth mechanisms is presented for the first time for semiconductor thin films deposited from solution. The columnar films showed well-defined twinning relations between neighboring columns, which exhibited 2D quantum confinement, as established by photoluminescence spectroscopy. In addition, anisotropic nanoscale electrical properties were investigated using current sensing AFM, which indicated vertical conductivity, while maintaining quantum confinement.
AB - We have studied columnar PbSe thin films obtained using chemical bath deposition. The columnar microstructure resulted from an oriented attachment growth mechanism, in which nuclei precipitating from solution attached along preferred crystallographic facets to form highly oriented, size-quantized columnar grains. This is shown to be an intermediate growth mechanism between the ion-by-ion and cluster growth mechanisms. A structural zone model depicting the active growth mechanisms is presented for the first time for semiconductor thin films deposited from solution. The columnar films showed well-defined twinning relations between neighboring columns, which exhibited 2D quantum confinement, as established by photoluminescence spectroscopy. In addition, anisotropic nanoscale electrical properties were investigated using current sensing AFM, which indicated vertical conductivity, while maintaining quantum confinement.
UR - http://www.scopus.com/inward/record.url?scp=85041922140&partnerID=8YFLogxK
U2 - 10.1021/acs.cgd.7b01771
DO - 10.1021/acs.cgd.7b01771
M3 - Article
AN - SCOPUS:85041922140
VL - 18
SP - 1227
EP - 1235
JO - Crystal Growth and Design
JF - Crystal Growth and Design
SN - 1528-7483
IS - 2
ER -