Oxidation kinetics of nitrogen doped TiO2-δ thin films: Analysis on the basis of oxygen activity dependence of the chemical diffusion coefficient

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Abstract

The model explaining the occurrence of the electron concentration step front during oxidation of nitrogen-doped TiO2-δ thin films is presented. This model is based on ambipolar chemical diffusion coefficient analysis, for which immobile and uniformly distributed nitrogen component is assumed. The diffusion species and oxygen activity (pressure) profiles are obtained by numerical and approximate analytical simulation of the chemical diffusion. The profiles indicate the presence of two separate singularities: the electron concentration step front, and the electronhole recombination reaction front. The electron concentration step front relates to the singularity of the ambipolar diffusion of three types of charged species with essentially different diffusion coefficients.

Original languageEnglish
Title of host publicationDiffusion in Materials DIMAT-2017 - 10th International Conference on Diffusion in Materials
EditorsEugen Rabkin, Leonid Klinger, Amy Novick-Cohen, Nachum Frage
PublisherTrans Tech Publications Ltd
Pages147-152
Number of pages6
Volume383
ISBN (Print)9783035711301
DOIs
StatePublished - 1 Jan 2018
Event10th International Conference on Diffusion in Materials, DIMAT 2017 - Haifa, Israel
Duration: 7 May 201712 May 2017

Conference

Conference10th International Conference on Diffusion in Materials, DIMAT 2017
Country/TerritoryIsrael
CityHaifa
Period7/05/1712/05/17

Keywords

  • Ambipolar chemical diffusion
  • Oxidation kinetics
  • Parabolic rate law
  • Titania

ASJC Scopus subject areas

  • Radiation
  • General Materials Science
  • Condensed Matter Physics

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