Oxidation of ion-bombarded vs. annealed beryllium

S. Zalkind, M. Polak, N. Shamir

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


The mechanisms of O2 adsorption and oxidation of ion-bombarded and annealed highly oriented polycrystalline beryllium surfaces were comparatively studied. It was found out that the basic mechanism of oxygen adsorption involves O clusters for both surfaces and at a certain oxygen coverage nucleation and growth of oxide islands take place. Also, in both cases, lateral growth of the islands dictates a relatively fast oxidation rate, which is decreased following coalescence, turning to a slow inverse logarithmic growth. The introduction of surface and subsurface defects by the Ar+ ion-bombardment almost doubles the oxygen sticking coefficient, increases the oxide island thickness from ∼2 to ∼3 monolayers (prior to coalescence) and dictates a higher oxidation rate in the high oxygen exposure regime. It was also found that annealing the surface, following sputtering, causes its smoothing, but in the initial heating process, in the range 300-500 K coarsening seems to occur.

Original languageEnglish
Pages (from-to)501-510
Number of pages10
JournalSurface Science
Issue number3
StatePublished - 1 Aug 2002


  • Adsorption kinetics
  • Alkaline earth metals
  • Oxidation
  • Oxygen
  • Radiation damage
  • Sputtering
  • Surface defects

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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