Oxidation of silicon-germanium alloys

S. Margalit, A. Bar-Lev, A. B. Kuper, H. Aharoni, A. Neugroschel

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

Oxidation of Si/Ge alloys, of up to 37% Ge, were investigated in view of the material utilization for MOS devices. Both single crystals and homogeneous polycrystalline Si/Ge, mainly in [111] direction, were used. The oxide formed after first oxidation was found to be SiO2 only, substantiated by several types of measurements. The Ge piled up at the interface. Higher order oxidations included an increasing amount of Ge. MOS capacitors and transistors were produced and showed higher surface state density and negatively charged oxides.

Original languageEnglish
Pages (from-to)288-297
Number of pages10
JournalJournal of Crystal Growth
Volume17
Issue numberC
DOIs
StatePublished - 1 Jan 1972
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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