Abstract
Oxidation of Si/Ge alloys, of up to 37% Ge, were investigated in view of the material utilization for MOS devices. Both single crystals and homogeneous polycrystalline Si/Ge, mainly in [111] direction, were used. The oxide formed after first oxidation was found to be SiO2 only, substantiated by several types of measurements. The Ge piled up at the interface. Higher order oxidations included an increasing amount of Ge. MOS capacitors and transistors were produced and showed higher surface state density and negatively charged oxides.
Original language | English |
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Pages (from-to) | 288-297 |
Number of pages | 10 |
Journal | Journal of Crystal Growth |
Volume | 17 |
Issue number | C |
DOIs | |
State | Published - 1 Jan 1972 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry