Paramagnetic anisotropic magnetoresistance in thin films of SrRuO 3

Isaschar Genish; Yevgeny Kats; Lior Klein; James W. Reiner; M. R. Beasley

doi:10.1063/1.1676052

Paramagnetic anisotropic magnetoresistance in thin films of SrRuO ₃

Isaschar Genish, Yevgeny Kats, Lior Klein, James W. Reiner, M. R. Beasley

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16 Scopus citations

Abstract

The paramegnetic anisotropic magnetoresistance (AMR) in thin films of SrRuO ₃ were investigated. The AMR and Hall effect were measured as a function of the angle between the field applied and the normal to the films above temperature 150 K. Significant AMR was observed even in the paramagnetic state, where magnetization was relatively small. A large effect of the orientation of magnetization and current relative to the crystal axes was was also observed.

Original language	English
Pages (from-to)	6681-6683
Number of pages	3
Journal	Journal of Applied Physics
Volume	95
Issue number	11 II
DOIs	https://doi.org/10.1063/1.1676052
State	Published - 1 Jun 2004
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (all)

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10.1063/1.1676052

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title = "Paramagnetic anisotropic magnetoresistance in thin films of SrRuO 3 ",

abstract = "The paramegnetic anisotropic magnetoresistance (AMR) in thin films of SrRuO 3 were investigated. The AMR and Hall effect were measured as a function of the angle between the field applied and the normal to the films above temperature 150 K. Significant AMR was observed even in the paramagnetic state, where magnetization was relatively small. A large effect of the orientation of magnetization and current relative to the crystal axes was was also observed.",

author = "Isaschar Genish and Yevgeny Kats and Lior Klein and Reiner, {James W.} and Beasley, {M. R.}",

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T1 - Paramagnetic anisotropic magnetoresistance in thin films of SrRuO 3

AU - Genish, Isaschar

AU - Kats, Yevgeny

AU - Klein, Lior

AU - Reiner, James W.

AU - Beasley, M. R.

PY - 2004/6/1

Y1 - 2004/6/1

N2 - The paramegnetic anisotropic magnetoresistance (AMR) in thin films of SrRuO 3 were investigated. The AMR and Hall effect were measured as a function of the angle between the field applied and the normal to the films above temperature 150 K. Significant AMR was observed even in the paramagnetic state, where magnetization was relatively small. A large effect of the orientation of magnetization and current relative to the crystal axes was was also observed.

AB - The paramegnetic anisotropic magnetoresistance (AMR) in thin films of SrRuO 3 were investigated. The AMR and Hall effect were measured as a function of the angle between the field applied and the normal to the films above temperature 150 K. Significant AMR was observed even in the paramagnetic state, where magnetization was relatively small. A large effect of the orientation of magnetization and current relative to the crystal axes was was also observed.

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M3 - Article

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Paramagnetic anisotropic magnetoresistance in thin films of SrRuO ₃

Abstract

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