Passivation of InP surfaces of electronic devices by organothiolated self-assembled monolayers

M. Schvartzman, V. Sidorov, D. Ritter, Y. Paz

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

The effect of modifying the surface of InP devices by thiolated self-assembled monolayers on their optoelectronic properties was demonstrated by three examples: photoluminescence of InP wafers, dark current under negative bias in interdigitated metal-semiconductor-metal diodes, and a reverse bias current in p-i-n diodes. Evidently, the thiolated SAMs reduced significantly the rate of nonradiative recombination at the surface. This was done by removing natural oxide and the prevention of reoxidation, as well as by reducing the number of dangling orbitals and, as a consequence, also the number of surface states.

Original languageEnglish
Pages (from-to)148-155
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number1 SPEC.
DOIs
StatePublished - 1 Jan 2003
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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