Passive Q-switching in Nd:YAG/Cr4+:YAG monolithic microchip laser

R. Feldman; Y. Shimony; Z. Burshtein

doi:10.1016/S0925-3467(03)00153-8

Passive Q-switching in Nd:YAG/Cr⁴⁺:YAG monolithic microchip laser

R. Feldman
, Y. Shimony
, Z. Burshtein

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

Composite laser devices of passively Q-switched Nd:YAG were prepared by optical contacting between Nd:YAG and Cr,Ca:YAG crystal wafers followed by prolonged heating at elevated temperatures. Heating of the composite devices under reducing and/or oxidizing environments allowed to control the Cr ⁴⁺ ion concentration in the Cr,Ca:YAG, thus affecting its absorption saturation behavior. Optical absorption saturation measurements on partially reduced Cr,Ca:YAG crystal were performed. Residual absorption of the saturable absorber at 1064 run results from the Cr⁴⁺ ion excited-state absorption. Laser damage threshold at the gain/absorber interface of the composite device, 14.7 J/cm², is higher than at the entrance face. The device thus obtained was end-pumped by a fiber-optic-coupled diode laser, and exhibited short (∼5 ns), high repetition-rate pulsing.

Original language	English
Pages (from-to)	393-399
Number of pages	7
Journal	Optical Materials
Volume	24
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-3467(03)00153-8
State	Published - 1 Jan 2003
Externally published	Yes

Keywords

Cr:YAG
Direct bonding
Microlaser
Oxidation/reduction
Passive Q-switch
Saturable absorption

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/S0925-3467(03)00153-8

Cite this

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title = "Passive Q-switching in Nd:YAG/Cr4+:YAG monolithic microchip laser",

abstract = "Composite laser devices of passively Q-switched Nd:YAG were prepared by optical contacting between Nd:YAG and Cr,Ca:YAG crystal wafers followed by prolonged heating at elevated temperatures. Heating of the composite devices under reducing and/or oxidizing environments allowed to control the Cr 4+ ion concentration in the Cr,Ca:YAG, thus affecting its absorption saturation behavior. Optical absorption saturation measurements on partially reduced Cr,Ca:YAG crystal were performed. Residual absorption of the saturable absorber at 1064 run results from the Cr4+ ion excited-state absorption. Laser damage threshold at the gain/absorber interface of the composite device, 14.7 J/cm2, is higher than at the entrance face. The device thus obtained was end-pumped by a fiber-optic-coupled diode laser, and exhibited short (∼5 ns), high repetition-rate pulsing.",

keywords = "Cr:YAG, Direct bonding, Microlaser, Oxidation/reduction, Passive Q-switch, Saturable absorption",

author = "R. Feldman and Y. Shimony and Z. Burshtein",

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T1 - Passive Q-switching in Nd:YAG/Cr4+:YAG monolithic microchip laser

AU - Feldman, R.

AU - Shimony, Y.

AU - Burshtein, Z.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - Composite laser devices of passively Q-switched Nd:YAG were prepared by optical contacting between Nd:YAG and Cr,Ca:YAG crystal wafers followed by prolonged heating at elevated temperatures. Heating of the composite devices under reducing and/or oxidizing environments allowed to control the Cr 4+ ion concentration in the Cr,Ca:YAG, thus affecting its absorption saturation behavior. Optical absorption saturation measurements on partially reduced Cr,Ca:YAG crystal were performed. Residual absorption of the saturable absorber at 1064 run results from the Cr4+ ion excited-state absorption. Laser damage threshold at the gain/absorber interface of the composite device, 14.7 J/cm2, is higher than at the entrance face. The device thus obtained was end-pumped by a fiber-optic-coupled diode laser, and exhibited short (∼5 ns), high repetition-rate pulsing.

AB - Composite laser devices of passively Q-switched Nd:YAG were prepared by optical contacting between Nd:YAG and Cr,Ca:YAG crystal wafers followed by prolonged heating at elevated temperatures. Heating of the composite devices under reducing and/or oxidizing environments allowed to control the Cr 4+ ion concentration in the Cr,Ca:YAG, thus affecting its absorption saturation behavior. Optical absorption saturation measurements on partially reduced Cr,Ca:YAG crystal were performed. Residual absorption of the saturable absorber at 1064 run results from the Cr4+ ion excited-state absorption. Laser damage threshold at the gain/absorber interface of the composite device, 14.7 J/cm2, is higher than at the entrance face. The device thus obtained was end-pumped by a fiber-optic-coupled diode laser, and exhibited short (∼5 ns), high repetition-rate pulsing.

KW - Cr:YAG

KW - Direct bonding

KW - Microlaser

KW - Oxidation/reduction

KW - Passive Q-switch

KW - Saturable absorption

UR - https://www.scopus.com/pages/publications/0141993626

U2 - 10.1016/S0925-3467(03)00153-8

DO - 10.1016/S0925-3467(03)00153-8

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