Patterning of nanopillars-based CdS/CdTe thin films for photonic applications

Murugaiya Sridar Ilango, Sheela K. Ramasesha

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


In this study we propose a new design to place the contacts for both p-type and n-type semiconductors at the bottom of solar cell to increase photons entering the absorber layer. The fabricated device contains periodic nanopillars of ∼243 nm radius and centre to centre pillar distance of ∼550 nm. In addition to the fabrication, thin films of n-CdS and p-CdTe have been characterised for their material properties at different annealing temperatures in this study. The X-ray diffraction pattern for CdTe and CdS revealed that the growth is preferentially along the (111) plane with a cubic zinc blend and cubic structure, respectively. Optimum absorption of the solar spectrum for a single junction solar cell occurs with the optical band gap of 2.36 eV for CdS and 1.45 eV for CdTe. The significance of the work creates a new beginning for the fabrication of textured thin film photovoltaic cell.

Original languageEnglish
Pages (from-to)907-914
Number of pages8
JournalSurface Engineering
Issue number12
StatePublished - 2 Dec 2018
Externally publishedYes


  • CdS/CdTe
  • E-beam lithography
  • nanopillar
  • thermal evaporation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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