PbTe films grown by hot wall epitaxy on sapphire substrates

Z. Dashevsky, A. Belenchuk, E. Gartstein, O. Shapoval

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

A 'hot wall epitaxy' is applied to grow PbTe thin films on sapphire substrates with BaF2 buffer layer deposited by molecular beam epitaxy (MBE). The microstructural and strain state characteristics of PbTe layer were examined with high resolution X-ray diffraction techniques. The epilayer is composed of two (1 1 1)PbTe||(0001)Al2O3 epitaxially oriented domain variants. The domains are azimuthally rotated and their interfacial directions relative to the substrate are [011̄] PbTe||[21̄1̄0]Al2O3 and [1̄54̄] PbTe||[2 1̄ 1̄ 0]Al2O3, respectively. Another possible alignment of the domain variant corresponds to [31̄2̄] PbTe[31̄2̄0]Al2O3 orientation. The strain state analysis of PbTe layer points to its relaxation via domain formation and high dislocation density generation in the lattice. Despite the domains formation the measured mobility of electron carriers is approximately 1600 cm2/V s and 30000 cm2/V s at 300 K and 77 K, respectively. The theoretical analysis of the measured electrical properties indicates that the scattering by acoustic and optical phonons is the factor affecting the conduction process.

Original languageEnglish
Pages (from-to)256-265
Number of pages10
JournalThin Solid Films
Volume461
Issue number2
DOIs
StatePublished - 16 Aug 2004

Keywords

  • Dislocation density
  • Electrical properties and measurements
  • Epitaxial relations
  • PbTe
  • Sapphire
  • Surface morphology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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