PbTe(In) films with variable microstructure for photodetection in IR and terahertz range

Ludmila Ryabova; Vladimir Chernichkin; Alexandr Dobrovolsky; Vladimir Kasiyan; Vasily Bel'Kov; Sergey Danilov; Zinovi Dashevsky; Sergei Ganichev; Dmitriy Khokhlov

doi:10.1117/12.922046

PbTe(In) films with variable microstructure for photodetection in IR and terahertz range

Ludmila Ryabova, Vladimir Chernichkin, Alexandr Dobrovolsky, Vladimir Kasiyan, Vasily Bel'Kov, Sergey Danilov, Zinovi Dashevsky, Sergei Ganichev, Dmitriy Khokhlov

Department of Materials Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The work deals with studies of the grain size and surface state effect on photoelectric and transport properties of PbTe(In) films in the temperature range from 4.2 K up to 200 K under irradiation of a blackbody source and terahertz laser pulses. The PbTe(In) films were deposited on insulating substrates kept at the temperatures T _S equal to -120 C H 250C. AFM, SEM, Auger spectroscopy and X-ray diffraction were used to study the film microstructure. Increase of the T _S value led to mean grain size growth from 60 up to 300 nm. All films had a column-like structure with the columns nearly perpendicular to the substrate plane. It is shown that microstructure of the films strongly affects the photoconductivity character in the terahertz region of the spectrum. Positive persistent photoresponse is observed at low temperatures in the polycrystalline films. For these films transport and photoelectric properties are determined by the grain volume and impurity state specifics. Nanocrystalline films have all features of non-homogeneous systems with band modulation. For these films only negative photoconductivity is observed in the whole temperature range. Possible mechanisms of the photoresponse formation are discussed.

Original language	English
Title of host publication	Optical Sensing and Detection II
DOIs	https://doi.org/10.1117/12.922046
State	Published - 12 Jun 2012
Event	Optical Sensing and Detection II - Brussels, Belgium Duration: 16 Apr 2012 → 19 Apr 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8439
ISSN (Print)	0277-786X

Conference

Conference	Optical Sensing and Detection II
Country/Territory	Belgium
City	Brussels
Period	16/04/12 → 19/04/12

Keywords

Doping
Grain size
Impurity states
Photoconductivity
Semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.922046

Cite this

Ryabova, L., Chernichkin, V., Dobrovolsky, A., Kasiyan, V., Bel'Kov, V., Danilov, S., Dashevsky, Z., Ganichev, S., & Khokhlov, D. (2012). PbTe(In) films with variable microstructure for photodetection in IR and terahertz range. In Optical Sensing and Detection II Article 84391H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8439). https://doi.org/10.1117/12.922046

@inproceedings{ecf55b859b204db3872d4ff00a315350,

title = "PbTe(In) films with variable microstructure for photodetection in IR and terahertz range",

abstract = "The work deals with studies of the grain size and surface state effect on photoelectric and transport properties of PbTe(In) films in the temperature range from 4.2 K up to 200 K under irradiation of a blackbody source and terahertz laser pulses. The PbTe(In) films were deposited on insulating substrates kept at the temperatures T S equal to -120 C H 250C. AFM, SEM, Auger spectroscopy and X-ray diffraction were used to study the film microstructure. Increase of the T S value led to mean grain size growth from 60 up to 300 nm. All films had a column-like structure with the columns nearly perpendicular to the substrate plane. It is shown that microstructure of the films strongly affects the photoconductivity character in the terahertz region of the spectrum. Positive persistent photoresponse is observed at low temperatures in the polycrystalline films. For these films transport and photoelectric properties are determined by the grain volume and impurity state specifics. Nanocrystalline films have all features of non-homogeneous systems with band modulation. For these films only negative photoconductivity is observed in the whole temperature range. Possible mechanisms of the photoresponse formation are discussed.",

keywords = "Doping, Grain size, Impurity states, Photoconductivity, Semiconductor",

author = "Ludmila Ryabova and Vladimir Chernichkin and Alexandr Dobrovolsky and Vladimir Kasiyan and Vasily Bel'Kov and Sergey Danilov and Zinovi Dashevsky and Sergei Ganichev and Dmitriy Khokhlov",

year = "2012",

month = jun,

day = "12",

doi = "10.1117/12.922046",

language = "English",

isbn = "9780819491312",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Optical Sensing and Detection II",

note = "Optical Sensing and Detection II ; Conference date: 16-04-2012 Through 19-04-2012",

}

Ryabova, L, Chernichkin, V, Dobrovolsky, A, Kasiyan, V, Bel'Kov, V, Danilov, S, Dashevsky, Z, Ganichev, S & Khokhlov, D 2012, PbTe(In) films with variable microstructure for photodetection in IR and terahertz range. in Optical Sensing and Detection II., 84391H, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8439, Optical Sensing and Detection II, Brussels, Belgium, 16/04/12. https://doi.org/10.1117/12.922046

PbTe(In) films with variable microstructure for photodetection in IR and terahertz range. / Ryabova, Ludmila; Chernichkin, Vladimir; Dobrovolsky, Alexandr et al.
Optical Sensing and Detection II. 2012. 84391H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8439).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - PbTe(In) films with variable microstructure for photodetection in IR and terahertz range

AU - Ryabova, Ludmila

AU - Chernichkin, Vladimir

AU - Dobrovolsky, Alexandr

AU - Kasiyan, Vladimir

AU - Bel'Kov, Vasily

AU - Danilov, Sergey

AU - Dashevsky, Zinovi

AU - Ganichev, Sergei

AU - Khokhlov, Dmitriy

PY - 2012/6/12

Y1 - 2012/6/12

N2 - The work deals with studies of the grain size and surface state effect on photoelectric and transport properties of PbTe(In) films in the temperature range from 4.2 K up to 200 K under irradiation of a blackbody source and terahertz laser pulses. The PbTe(In) films were deposited on insulating substrates kept at the temperatures T S equal to -120 C H 250C. AFM, SEM, Auger spectroscopy and X-ray diffraction were used to study the film microstructure. Increase of the T S value led to mean grain size growth from 60 up to 300 nm. All films had a column-like structure with the columns nearly perpendicular to the substrate plane. It is shown that microstructure of the films strongly affects the photoconductivity character in the terahertz region of the spectrum. Positive persistent photoresponse is observed at low temperatures in the polycrystalline films. For these films transport and photoelectric properties are determined by the grain volume and impurity state specifics. Nanocrystalline films have all features of non-homogeneous systems with band modulation. For these films only negative photoconductivity is observed in the whole temperature range. Possible mechanisms of the photoresponse formation are discussed.

AB - The work deals with studies of the grain size and surface state effect on photoelectric and transport properties of PbTe(In) films in the temperature range from 4.2 K up to 200 K under irradiation of a blackbody source and terahertz laser pulses. The PbTe(In) films were deposited on insulating substrates kept at the temperatures T S equal to -120 C H 250C. AFM, SEM, Auger spectroscopy and X-ray diffraction were used to study the film microstructure. Increase of the T S value led to mean grain size growth from 60 up to 300 nm. All films had a column-like structure with the columns nearly perpendicular to the substrate plane. It is shown that microstructure of the films strongly affects the photoconductivity character in the terahertz region of the spectrum. Positive persistent photoresponse is observed at low temperatures in the polycrystalline films. For these films transport and photoelectric properties are determined by the grain volume and impurity state specifics. Nanocrystalline films have all features of non-homogeneous systems with band modulation. For these films only negative photoconductivity is observed in the whole temperature range. Possible mechanisms of the photoresponse formation are discussed.

KW - Doping

KW - Grain size

KW - Impurity states

KW - Photoconductivity

KW - Semiconductor

UR - http://www.scopus.com/inward/record.url?scp=84861938348&partnerID=8YFLogxK

U2 - 10.1117/12.922046

DO - 10.1117/12.922046

M3 - Conference contribution

AN - SCOPUS:84861938348

SN - 9780819491312

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Optical Sensing and Detection II

T2 - Optical Sensing and Detection II

Y2 - 16 April 2012 through 19 April 2012

ER -

PbTe(In) films with variable microstructure for photodetection in IR and terahertz range

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this