Peculiarities of high power infrared detection on narrow-gap semiconductor p-n junctions

J. Gradauskas; E. Širmulis; S. Ašmontas; A. Sužiedelis; Z. Dashevsky; V. Kasiyan

doi:10.12693/APhysPolA.119.237

Peculiarities of high power infrared detection on narrow-gap semiconductor p-n junctions

J. Gradauskas, E. Širmulis, S. Ašmontas, A. Sužiedelis, Z. Dashevsky, V. Kasiyan

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report on experimental results of photosignal investigation in HgCdTe, InSb and PbTe semiconductor p-n junctions under the action of an intense pulsed CO₂ laser. The influence of laser power, external bias voltage as well as the diode temperature on the photosignal formation has been studied. We show that under certain conditions both classical photovoltaic and hot carrier phenomena may act simultaneously within a junction thus strongly impacting on responsivity and speed of operation of the device. The drawn conclusions may be of great importance for the development of high power optoelectronic devices.

Original language	English
Pages (from-to)	237-240
Number of pages	4
Journal	Acta Physica Polonica A
Volume	119
Issue number	2
DOIs	https://doi.org/10.12693/APhysPolA.119.237
State	Published - 1 Jan 2011

ASJC Scopus subject areas

General Physics and Astronomy

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10.12693/APhysPolA.119.237

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abstract = "We report on experimental results of photosignal investigation in HgCdTe, InSb and PbTe semiconductor p-n junctions under the action of an intense pulsed CO2 laser. The influence of laser power, external bias voltage as well as the diode temperature on the photosignal formation has been studied. We show that under certain conditions both classical photovoltaic and hot carrier phenomena may act simultaneously within a junction thus strongly impacting on responsivity and speed of operation of the device. The drawn conclusions may be of great importance for the development of high power optoelectronic devices.",

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AU - Širmulis, E.

AU - Ašmontas, S.

AU - Sužiedelis, A.

AU - Dashevsky, Z.

AU - Kasiyan, V.

PY - 2011/1/1

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N2 - We report on experimental results of photosignal investigation in HgCdTe, InSb and PbTe semiconductor p-n junctions under the action of an intense pulsed CO2 laser. The influence of laser power, external bias voltage as well as the diode temperature on the photosignal formation has been studied. We show that under certain conditions both classical photovoltaic and hot carrier phenomena may act simultaneously within a junction thus strongly impacting on responsivity and speed of operation of the device. The drawn conclusions may be of great importance for the development of high power optoelectronic devices.

AB - We report on experimental results of photosignal investigation in HgCdTe, InSb and PbTe semiconductor p-n junctions under the action of an intense pulsed CO2 laser. The influence of laser power, external bias voltage as well as the diode temperature on the photosignal formation has been studied. We show that under certain conditions both classical photovoltaic and hot carrier phenomena may act simultaneously within a junction thus strongly impacting on responsivity and speed of operation of the device. The drawn conclusions may be of great importance for the development of high power optoelectronic devices.

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Peculiarities of high power infrared detection on narrow-gap semiconductor p-n junctions

Abstract

ASJC Scopus subject areas

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