Peculiarities of high power infrared detection on narrow-gap semiconductor p-n junctions

J. Gradauskas, E. Širmulis, S. Ašmontas, A. Sužiedelis, Z. Dashevsky, V. Kasiyan

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We report on experimental results of photosignal investigation in HgCdTe, InSb and PbTe semiconductor p-n junctions under the action of an intense pulsed CO2 laser. The influence of laser power, external bias voltage as well as the diode temperature on the photosignal formation has been studied. We show that under certain conditions both classical photovoltaic and hot carrier phenomena may act simultaneously within a junction thus strongly impacting on responsivity and speed of operation of the device. The drawn conclusions may be of great importance for the development of high power optoelectronic devices.

Original languageEnglish
Pages (from-to)237-240
Number of pages4
JournalActa Physica Polonica A
Volume119
Issue number2
DOIs
StatePublished - 1 Jan 2011

Fingerprint

Dive into the research topics of 'Peculiarities of high power infrared detection on narrow-gap semiconductor p-n junctions'. Together they form a unique fingerprint.

Cite this