Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer

V. A. Kulbachinskii, V. G. Kytin, V. A. Rogozin, B. N. Zvonkov, Z. Dashevsky, V. A. Casian

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Persistent lateral infra-red photoconductivity has been observed and investigated in InAs/GaAs layers with quantum dots (QD) in the temperature range 4.2<T<300 K. The relaxation of photoconductivity was logarithmic in a certain time range after switching off the light, while the rate of the decay of photoconductivity increases strongly when temperature increases.

Original languageEnglish
Pages (from-to)1-7
Number of pages7
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1
StatePublished - 1 Jul 2007


  • GaAs
  • Persistent infra-red photoconductivity
  • Quantum dots
  • Shubnikov-de Haas effect
  • Transport phenomena

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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