Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer

V. A. Kulbachinskii; V. G. Kytin; V. A. Rogozin; B. N. Zvonkov; Z. Dashevsky; V. A. Casian

doi:10.1016/j.physe.2006.11.001

Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer

V. A. Kulbachinskii
, V. G. Kytin
, V. A. Rogozin
, B. N. Zvonkov
, Z. Dashevsky
, V. A. Casian

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Persistent lateral infra-red photoconductivity has been observed and investigated in InAs/GaAs layers with quantum dots (QD) in the temperature range 4.2<T<300 K. The relaxation of photoconductivity was logarithmic in a certain time range after switching off the light, while the rate of the decay of photoconductivity increases strongly when temperature increases.

Original language	English
Pages (from-to)	1-7
Number of pages	7
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	39
Issue number	1
DOIs	https://doi.org/10.1016/j.physe.2006.11.001
State	Published - 1 Jul 2007

Keywords

GaAs
Persistent infra-red photoconductivity
Quantum dots
Shubnikov-de Haas effect
Transport phenomena

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2006.11.001

Cite this

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title = "Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer",

abstract = "Persistent lateral infra-red photoconductivity has been observed and investigated in InAs/GaAs layers with quantum dots (QD) in the temperature range 4.2",

keywords = "GaAs, Persistent infra-red photoconductivity, Quantum dots, Shubnikov-de Haas effect, Transport phenomena",

author = "Kulbachinskii, \{V. A.\} and Kytin, \{V. G.\} and Rogozin, \{V. A.\} and Zvonkov, \{B. N.\} and Z. Dashevsky and Casian, \{V. A.\}",

year = "2007",

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doi = "10.1016/j.physe.2006.11.001",

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T1 - Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer

AU - Kulbachinskii, V. A.

AU - Kytin, V. G.

AU - Rogozin, V. A.

AU - Zvonkov, B. N.

AU - Dashevsky, Z.

AU - Casian, V. A.

PY - 2007/7/1

Y1 - 2007/7/1

N2 - Persistent lateral infra-red photoconductivity has been observed and investigated in InAs/GaAs layers with quantum dots (QD) in the temperature range 4.2

AB - Persistent lateral infra-red photoconductivity has been observed and investigated in InAs/GaAs layers with quantum dots (QD) in the temperature range 4.2

KW - GaAs

KW - Persistent infra-red photoconductivity

KW - Quantum dots

KW - Shubnikov-de Haas effect

KW - Transport phenomena

UR - https://www.scopus.com/pages/publications/34250754490

U2 - 10.1016/j.physe.2006.11.001

DO - 10.1016/j.physe.2006.11.001

M3 - Article

AN - SCOPUS:34250754490

SN - 1386-9477

VL - 39

SP - 1

EP - 7

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1

ER -

Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer

Abstract

Keywords

ASJC Scopus subject areas

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