Persistent IR photoconductivity in InAs/GaAs structures with QD layers

V. A. Kul'bachinskiǐ; V. A. Rogozin; V. G. Kytin; R. A. Lunin; B. N. Zvonkov; Z. M. Dashevsky; V. A. Casian

doi:10.1134/S1063782606020187

Persistent IR photoconductivity in InAs/GaAs structures with QD layers

V. A. Kul'bachinskiǐ, V. A. Rogozin, V. G. Kytin, R. A. Lunin, B. N. Zvonkov, Z. M. Dashevsky, V. A. Casian

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Persistent IR photoconductivity in InAs/GaAs structures with layers of QDs with a p-and n-type conductivity was studied. At the initial stage, after the illumination is switched off, the relaxation of photoconductivity follows a logarithmic law. The relaxation time depends on temperature; it decreases as temperature increases. A simple model of photoconductivity relaxation, based on thermal activation of carriers from the QD layer, is proposed. The model is consistent with the experimental data.

Original language	English
Pages (from-to)	210-216
Number of pages	7
Journal	Semiconductors
Volume	40
Issue number	2
DOIs	https://doi.org/10.1134/S1063782606020187
State	Published - 1 Jan 2006

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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@article{1681b6c45abe4404a4297b17dd4a812d,

title = "Persistent IR photoconductivity in InAs/GaAs structures with QD layers",

abstract = "Persistent IR photoconductivity in InAs/GaAs structures with layers of QDs with a p-and n-type conductivity was studied. At the initial stage, after the illumination is switched off, the relaxation of photoconductivity follows a logarithmic law. The relaxation time depends on temperature; it decreases as temperature increases. A simple model of photoconductivity relaxation, based on thermal activation of carriers from the QD layer, is proposed. The model is consistent with the experimental data.",

author = "Kul'bachinskiǐ, {V. A.} and Rogozin, {V. A.} and Kytin, {V. G.} and Lunin, {R. A.} and Zvonkov, {B. N.} and Dashevsky, {Z. M.} and Casian, {V. A.}",

note = "Funding Information: ACKNOWLEDGMENTS The study was supported by the Russian Foundation for Basic Research (project no. 05-02-17029-a).",

year = "2006",

month = jan,

day = "1",

doi = "10.1134/S1063782606020187",

language = "English",

volume = "40",

pages = "210--216",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "2",

}

TY - JOUR

T1 - Persistent IR photoconductivity in InAs/GaAs structures with QD layers

AU - Kul'bachinskiǐ, V. A.

AU - Rogozin, V. A.

AU - Kytin, V. G.

AU - Lunin, R. A.

AU - Zvonkov, B. N.

AU - Dashevsky, Z. M.

AU - Casian, V. A.

N1 - Funding Information: ACKNOWLEDGMENTS The study was supported by the Russian Foundation for Basic Research (project no. 05-02-17029-a).

PY - 2006/1/1

Y1 - 2006/1/1

N2 - Persistent IR photoconductivity in InAs/GaAs structures with layers of QDs with a p-and n-type conductivity was studied. At the initial stage, after the illumination is switched off, the relaxation of photoconductivity follows a logarithmic law. The relaxation time depends on temperature; it decreases as temperature increases. A simple model of photoconductivity relaxation, based on thermal activation of carriers from the QD layer, is proposed. The model is consistent with the experimental data.

AB - Persistent IR photoconductivity in InAs/GaAs structures with layers of QDs with a p-and n-type conductivity was studied. At the initial stage, after the illumination is switched off, the relaxation of photoconductivity follows a logarithmic law. The relaxation time depends on temperature; it decreases as temperature increases. A simple model of photoconductivity relaxation, based on thermal activation of carriers from the QD layer, is proposed. The model is consistent with the experimental data.

UR - http://www.scopus.com/inward/record.url?scp=33645000562&partnerID=8YFLogxK

U2 - 10.1134/S1063782606020187

DO - 10.1134/S1063782606020187

M3 - Article

AN - SCOPUS:33645000562

SN - 1063-7826

VL - 40

SP - 210

EP - 216

JO - Semiconductors

JF - Semiconductors

IS - 2

ER -

Persistent IR photoconductivity in InAs/GaAs structures with QD layers

Abstract

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