Persistent IR photoconductivity in InAs/GaAs structures with QD layers

V. A. Kul'bachinskiǐ; V. A. Rogozin; V. G. Kytin; R. A. Lunin; B. N. Zvonkov; Z. M. Dashevsky; V. A. Casian

doi:10.1134/S1063782606020187

Persistent IR photoconductivity in InAs/GaAs structures with QD layers

V. A. Kul'bachinskiǐ
, V. A. Rogozin
, V. G. Kytin
, R. A. Lunin
, B. N. Zvonkov
, Z. M. Dashevsky
, V. A. Casian

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Persistent IR photoconductivity in InAs/GaAs structures with layers of QDs with a p-and n-type conductivity was studied. At the initial stage, after the illumination is switched off, the relaxation of photoconductivity follows a logarithmic law. The relaxation time depends on temperature; it decreases as temperature increases. A simple model of photoconductivity relaxation, based on thermal activation of carriers from the QD layer, is proposed. The model is consistent with the experimental data.

Original language	English
Pages (from-to)	210-216
Number of pages	7
Journal	Semiconductors
Volume	40
Issue number	2
DOIs	https://doi.org/10.1134/S1063782606020187
State	Published - 1 Jan 2006

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Persistent IR photoconductivity in InAs/GaAs structures with QD layers",

abstract = "Persistent IR photoconductivity in InAs/GaAs structures with layers of QDs with a p-and n-type conductivity was studied. At the initial stage, after the illumination is switched off, the relaxation of photoconductivity follows a logarithmic law. The relaxation time depends on temperature; it decreases as temperature increases. A simple model of photoconductivity relaxation, based on thermal activation of carriers from the QD layer, is proposed. The model is consistent with the experimental data.",

author = "Kul'bachinskiǐ, \{V. A.\} and Rogozin, \{V. A.\} and Kytin, \{V. G.\} and Lunin, \{R. A.\} and Zvonkov, \{B. N.\} and Dashevsky, \{Z. M.\} and Casian, \{V. A.\}",

note = "Funding Information: ACKNOWLEDGMENTS The study was supported by the Russian Foundation for Basic Research (project no. 05-02-17029-a).",

year = "2006",

month = jan,

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doi = "10.1134/S1063782606020187",

language = "English",

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journal = "Semiconductors",

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T1 - Persistent IR photoconductivity in InAs/GaAs structures with QD layers

AU - Kul'bachinskiǐ, V. A.

AU - Rogozin, V. A.

AU - Kytin, V. G.

AU - Lunin, R. A.

AU - Zvonkov, B. N.

AU - Dashevsky, Z. M.

AU - Casian, V. A.

N1 - Funding Information: ACKNOWLEDGMENTS The study was supported by the Russian Foundation for Basic Research (project no. 05-02-17029-a).

PY - 2006/1/1

Y1 - 2006/1/1

N2 - Persistent IR photoconductivity in InAs/GaAs structures with layers of QDs with a p-and n-type conductivity was studied. At the initial stage, after the illumination is switched off, the relaxation of photoconductivity follows a logarithmic law. The relaxation time depends on temperature; it decreases as temperature increases. A simple model of photoconductivity relaxation, based on thermal activation of carriers from the QD layer, is proposed. The model is consistent with the experimental data.

AB - Persistent IR photoconductivity in InAs/GaAs structures with layers of QDs with a p-and n-type conductivity was studied. At the initial stage, after the illumination is switched off, the relaxation of photoconductivity follows a logarithmic law. The relaxation time depends on temperature; it decreases as temperature increases. A simple model of photoconductivity relaxation, based on thermal activation of carriers from the QD layer, is proposed. The model is consistent with the experimental data.

UR - https://www.scopus.com/pages/publications/33645000562

U2 - 10.1134/S1063782606020187

DO - 10.1134/S1063782606020187

M3 - Article

AN - SCOPUS:33645000562

SN - 1063-7826

VL - 40

SP - 210

EP - 216

JO - Semiconductors

JF - Semiconductors

IS - 2

ER -

Persistent IR photoconductivity in InAs/GaAs structures with QD layers

Abstract

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