Phase formation between codeposited Co-Ta thin film and single crystal silicon substrate

G. Briskin, J. Pelleg, M. Talianker

Research output: Contribution to journalConference articlepeer-review


A combination of near-noble and refractory metal silicides was considered for shallow contacts to silicon in VLSI circuits [1]. The objective of the present work is to investigate formation of phases between codeposited Co-Ta film, of 150 nm thickness, and n-type silicon substrates of (100) or (111) orientation. Characterization of the specimens annealed in the temperature range of 600-1100°C was done by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It was found that in addition to the silicide phases of Co and Ta, the intermetallic compound Co2Ta was also formed. Co2Ta appears only in the lower temperature range of about 600-800°C. At temperatures of 900-1100°C only the silicon rich phases were present. These are the low resistivity phases useful for devices. No ternary phases have been observed. Silicide formation occurs at a faster rate on (111) oriented silicon substrates.

Original languageEnglish
Pages (from-to)179-184
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1 Jan 1996
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: 27 Nov 199530 Nov 1995

ASJC Scopus subject areas

  • Materials Science (all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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