Phase Transition and Point Defects in the Ferroelectric Molecular Perovskite (MDABCO)(NH₄)I₃

We measured the anelastic, dielectric and structural properties of the metal-free molecular perovskite (ABX (Formula presented.)) (MDABCO)(NH (Formula presented.))I (Formula presented.), which has already been demonstrated to become ferroelectric below (Formula presented.) 448 K. Both the dielectric permittivity measured in air on discs pressed from powder and the complex Young’s modulus measured on resonating bars in a vacuum show that the material starts to deteriorate with a loss of mass just above (Formula presented.), introducing defects and markedly lowering (Formula presented.). The elastic modulus softens by 50% when heating through the initial (Formula presented.), contrary to usual ferroelectrics, which are stiffer in the paraelectric phase. This is indicative of improper ferroelectricity, in which the primary order parameter of the transition is not the electric polarization, but the orientational order of the MDABCO molecules. The degraded material presents thermally activated relaxation peaks in the elastic energy loss, whose intensities increase together with the decrease in (Formula presented.). The peaks are much broader than pure Debye due to the general loss of crystallinity. This is also apparent from X-ray diffraction, but their relaxation times have parameters typical of point defects. It is argued that the major defects should be of the Schottky type, mainly due to the loss of (MDABCO) (Formula presented.) and I (Formula presented.), leaving charge neutrality, and possibly (NH (Formula presented.)) (Formula presented.) vacancies. The focus is on an anelastic relaxation process peaked around 200 K at ∼1 kHz, whose relaxation time follows the Arrhenius law with (Formula presented.) (Formula presented.) ∼ (Formula presented.) s and (Formula presented.) eV. This peak is attributed to I vacancies (V (Formula presented.)) hopping around MDABCO vacancies (V (Formula presented.)), and its intensity presents a peculiar dependence on the temperature and content of defects. The phenomenology is thoroughly discussed in terms of lattice disorder introduced by defects and partition of V (Formula presented.) among sites that are far from and close to the cation vacancies. A method is proposed for calculating the relative concentrations of V (Formula presented.), that are untrapped, paired with V (Formula presented.) or forming V (Formula presented.) –V (Formula presented.) –V (Formula presented.) complexes.