The photo-electric characteristics of tunnel MIS photo-detectors based on Hg1-xCdxTe for x ≈ 0.2 are presented. In order to reduce or eliminate Fermi level pinning, a passivation dielectric layer with thickness allowing for free carrier tunneling was grown on the metal-semiconductor interface. Dielectric layers composed of native oxides, native fluorides, SiO2 or Al2O3 were investigated. Values as high as 6.2 A W-1 for spectral responsivity and 5.3 × 1010 cm Hz1/2 W-1 for specific detectivity were obtained.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry