Photo-electric characteristics of HgCdTe tunnel MIS photo-detectors

Vesna Damnjanović; V. P. Ponomarenko; Jovan M. Elazar

doi:10.1088/0268-1242/24/2/025003

Photo-electric characteristics of HgCdTe tunnel MIS photo-detectors

Vesna Damnjanović, V. P. Ponomarenko, Jovan M. Elazar

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The photo-electric characteristics of tunnel MIS photo-detectors based on Hg_1-xCd_xTe for x ≈ 0.2 are presented. In order to reduce or eliminate Fermi level pinning, a passivation dielectric layer with thickness allowing for free carrier tunneling was grown on the metal-semiconductor interface. Dielectric layers composed of native oxides, native fluorides, SiO₂ or Al₂O₃ were investigated. Values as high as 6.2 A W^-1 for spectral responsivity and 5.3 × 10¹⁰ cm Hz^1/2 W^-1 for specific detectivity were obtained.

Original language	English
Article number	025003
Journal	Semiconductor Science and Technology
Volume	24
Issue number	2
DOIs	https://doi.org/10.1088/0268-1242/24/2/025003
State	Published - 16 Apr 2009
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/24/2/025003

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abstract = "The photo-electric characteristics of tunnel MIS photo-detectors based on Hg1-xCdxTe for x ≈ 0.2 are presented. In order to reduce or eliminate Fermi level pinning, a passivation dielectric layer with thickness allowing for free carrier tunneling was grown on the metal-semiconductor interface. Dielectric layers composed of native oxides, native fluorides, SiO2 or Al2O3 were investigated. Values as high as 6.2 A W-1 for spectral responsivity and 5.3 × 1010 cm Hz1/2 W-1 for specific detectivity were obtained.",

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AU - Damnjanović, Vesna

AU - Ponomarenko, V. P.

AU - Elazar, Jovan M.

PY - 2009/4/16

Y1 - 2009/4/16

N2 - The photo-electric characteristics of tunnel MIS photo-detectors based on Hg1-xCdxTe for x ≈ 0.2 are presented. In order to reduce or eliminate Fermi level pinning, a passivation dielectric layer with thickness allowing for free carrier tunneling was grown on the metal-semiconductor interface. Dielectric layers composed of native oxides, native fluorides, SiO2 or Al2O3 were investigated. Values as high as 6.2 A W-1 for spectral responsivity and 5.3 × 1010 cm Hz1/2 W-1 for specific detectivity were obtained.

AB - The photo-electric characteristics of tunnel MIS photo-detectors based on Hg1-xCdxTe for x ≈ 0.2 are presented. In order to reduce or eliminate Fermi level pinning, a passivation dielectric layer with thickness allowing for free carrier tunneling was grown on the metal-semiconductor interface. Dielectric layers composed of native oxides, native fluorides, SiO2 or Al2O3 were investigated. Values as high as 6.2 A W-1 for spectral responsivity and 5.3 × 1010 cm Hz1/2 W-1 for specific detectivity were obtained.

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IS - 2

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ER -

Photo-electric characteristics of HgCdTe tunnel MIS photo-detectors

Abstract

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