Photo-electric characteristics of HgCdTe tunnel MIS photo-detectors

Vesna Damnjanović, V. P. Ponomarenko, Jovan M. Elazar

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The photo-electric characteristics of tunnel MIS photo-detectors based on Hg1-xCdxTe for x ≈ 0.2 are presented. In order to reduce or eliminate Fermi level pinning, a passivation dielectric layer with thickness allowing for free carrier tunneling was grown on the metal-semiconductor interface. Dielectric layers composed of native oxides, native fluorides, SiO2 or Al2O3 were investigated. Values as high as 6.2 A W-1 for spectral responsivity and 5.3 × 1010 cm Hz1/2 W-1 for specific detectivity were obtained.

Original languageEnglish
Article number025003
JournalSemiconductor Science and Technology
Volume24
Issue number2
DOIs
StatePublished - 16 Apr 2009
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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