Abstract
Our study is concerned with the photo-thermovoltaic effects caused by the absorption of CO2 laser light in narrow gap AIVBVI semiconductors. We report on results of experimental study of photoresponse induced in n-type and p-type lead telluride with Ni contacts. We show that in the case of ohmic contacts (n-PbTe-Ni and p-PbTe-Ni at 300K) the detected signal originates from thermoemf due to created crystal lattice temperature gradient. In the case of p-PbTe-Ni at 80K we have Schottky contacts and the photoresponse consists at least of two components: fast and great in value photoemf-due to career generation resulting from two-photon absorption, and slow as well as of lower magnitude thermoemf.
Original language | English |
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Pages (from-to) | 230-234 |
Number of pages | 5 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4318 |
DOIs | |
State | Published - 1 Jan 2001 |
Keywords
- Detection
- Infrared
- Lead telluride
- Thermoemf
- Two-photon absorption
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering