Photoconductivity of Pb1-xSnxTe(In) narrow-gap semiconductors with variable composition and microstructure in the terahertz range

Ludmila Ryabova, Alexander Dobrovolsky, Vladimir Chernichkin, Dmitry Khokhlov, Zinovy Dashevsky, Vladimir Kasiyan, Andrei Nicorici, Sergey Ganichev, Sergey Danilov, Vassily Bel'kov

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Photoconductive response at wavelengths up to 500 μm has been detected in Pb1-xSnxTe(In) solid solutions. The effect is observed both in the semi-insulating state and at high levels of electron gas degeneracy. The film microstructure affects the photosensitivity strongly.

Original languageEnglish
Title of host publicationIRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
DOIs
StatePublished - 30 Nov 2010
Event35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 - Rome, Italy
Duration: 5 Sep 201010 Sep 2010

Publication series

NameIRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

Conference

Conference35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010
Country/TerritoryItaly
CityRome
Period5/09/1010/09/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Photoconductivity of Pb1-xSnxTe(In) narrow-gap semiconductors with variable composition and microstructure in the terahertz range'. Together they form a unique fingerprint.

Cite this