Photoconductivity of Pb1-xSnxTe(In) narrow-gap semiconductors with variable composition and microstructure in the terahertz range

Ludmila Ryabova; Alexander Dobrovolsky; Vladimir Chernichkin; Dmitry Khokhlov; Zinovy Dashevsky; Vladimir Kasiyan; Andrei Nicorici; Sergey Ganichev; Sergey Danilov; Vassily Bel'kov

doi:10.1109/ICIMW.2010.5613010

Photoconductivity of Pb_1-xSn_xTe(In) narrow-gap semiconductors with variable composition and microstructure in the terahertz range

Ludmila Ryabova, Alexander Dobrovolsky, Vladimir Chernichkin, Dmitry Khokhlov, Zinovy Dashevsky, Vladimir Kasiyan, Andrei Nicorici, Sergey Ganichev, Sergey Danilov, Vassily Bel'kov

Department of Materials Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Photoconductive response at wavelengths up to 500 μm has been detected in Pb_1-xSn_xTe(In) solid solutions. The effect is observed both in the semi-insulating state and at high levels of electron gas degeneracy. The film microstructure affects the photosensitivity strongly.

Original language	English
Title of host publication	IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
DOIs	https://doi.org/10.1109/ICIMW.2010.5613010
State	Published - 30 Nov 2010
Event	35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 - Rome, Italy Duration: 5 Sep 2010 → 10 Sep 2010

Publication series

Name	IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

Conference

Conference	35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010
Country/Territory	Italy
City	Rome
Period	5/09/10 → 10/09/10

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICIMW.2010.5613010

Cite this

Ryabova, L., Dobrovolsky, A., Chernichkin, V., Khokhlov, D., Dashevsky, Z., Kasiyan, V., Nicorici, A., Ganichev, S., Danilov, S., & Bel'kov, V. (2010). Photoconductivity of Pb_1-xSn_xTe(In) narrow-gap semiconductors with variable composition and microstructure in the terahertz range. In IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide Article 5613010 (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide). https://doi.org/10.1109/ICIMW.2010.5613010

Ryabova, Ludmila ; Dobrovolsky, Alexander ; Chernichkin, Vladimir et al. / Photoconductivity of Pb_1-xSn_xTe(In) narrow-gap semiconductors with variable composition and microstructure in the terahertz range. IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. 2010. (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide).

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title = "Photoconductivity of Pb1-xSnxTe(In) narrow-gap semiconductors with variable composition and microstructure in the terahertz range",

abstract = "Photoconductive response at wavelengths up to 500 μm has been detected in Pb1-xSnxTe(In) solid solutions. The effect is observed both in the semi-insulating state and at high levels of electron gas degeneracy. The film microstructure affects the photosensitivity strongly.",

author = "Ludmila Ryabova and Alexander Dobrovolsky and Vladimir Chernichkin and Dmitry Khokhlov and Zinovy Dashevsky and Vladimir Kasiyan and Andrei Nicorici and Sergey Ganichev and Sergey Danilov and Vassily Bel'kov",

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doi = "10.1109/ICIMW.2010.5613010",

language = "English",

isbn = "9781424466573",

series = "IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide",

booktitle = "IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide",

note = "35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010 ; Conference date: 05-09-2010 Through 10-09-2010",

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Ryabova, L, Dobrovolsky, A, Chernichkin, V, Khokhlov, D, Dashevsky, Z, Kasiyan, V, Nicorici, A, Ganichev, S, Danilov, S & Bel'kov, V 2010, Photoconductivity of Pb_1-xSn_xTe(In) narrow-gap semiconductors with variable composition and microstructure in the terahertz range. in IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide., 5613010, IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide, 35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010, Rome, Italy, 5/09/10. https://doi.org/10.1109/ICIMW.2010.5613010

Photoconductivity of Pb_1-xSn_xTe(In) narrow-gap semiconductors with variable composition and microstructure in the terahertz range. / Ryabova, Ludmila; Dobrovolsky, Alexander; Chernichkin, Vladimir et al.
IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. 2010. 5613010 (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Photoconductivity of Pb1-xSnxTe(In) narrow-gap semiconductors with variable composition and microstructure in the terahertz range

AU - Ryabova, Ludmila

AU - Dobrovolsky, Alexander

AU - Chernichkin, Vladimir

AU - Khokhlov, Dmitry

AU - Dashevsky, Zinovy

AU - Kasiyan, Vladimir

AU - Nicorici, Andrei

AU - Ganichev, Sergey

AU - Danilov, Sergey

AU - Bel'kov, Vassily

PY - 2010/11/30

Y1 - 2010/11/30

N2 - Photoconductive response at wavelengths up to 500 μm has been detected in Pb1-xSnxTe(In) solid solutions. The effect is observed both in the semi-insulating state and at high levels of electron gas degeneracy. The film microstructure affects the photosensitivity strongly.

AB - Photoconductive response at wavelengths up to 500 μm has been detected in Pb1-xSnxTe(In) solid solutions. The effect is observed both in the semi-insulating state and at high levels of electron gas degeneracy. The film microstructure affects the photosensitivity strongly.

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U2 - 10.1109/ICIMW.2010.5613010

DO - 10.1109/ICIMW.2010.5613010

M3 - Conference contribution

AN - SCOPUS:78649336221

SN - 9781424466573

T3 - IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

BT - IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

T2 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2010

Y2 - 5 September 2010 through 10 September 2010

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Ryabova L, Dobrovolsky A, Chernichkin V, Khokhlov D, Dashevsky Z, Kasiyan V et al. Photoconductivity of Pb_1-xSn_xTe(In) narrow-gap semiconductors with variable composition and microstructure in the terahertz range. In IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. 2010. 5613010. (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide). doi: 10.1109/ICIMW.2010.5613010