Photodoping of glassy arsenic chalcogenide films by zinc

A. Arsh, N. Froumin, M. Klebanov, V. Lyubin

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Thermo- and photodoping of glassy As2S3, As 2Se3 and As50Se50 films by Zn is investigated. Zn dissolution and Zn diffusion processes were studied separately. Threshold temperatures for beginning of the photodissolution and thermodissolution were determined for all three types of chalcogenide films. The study of the etching rate of doped chalcogenide films in some liquid etchants and of Zn depth profile by the method of Auger spectroscopy clearly showed the existence of photo- and thermoinduced diffusion of Zn in the chalcogenide materials under investigation. The difference between these two processes was pointed out.

Original languageEnglish
Pages (from-to)27-32
Number of pages6
JournalJournal of Optoelectronics and Advanced Materials
Issue number1
StatePublished - 1 Jan 2002


  • Chalcogenide films
  • Photodoping
  • Zn photodiffusion

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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