Photoemission and scanning-tunneling-microscopy study of GaSb (100)

GE Franklin, DH Rich, A Samsavar, ES Hirschorn, FM Leibsle, T Miller, T-C Chiang

Research output: Contribution to journalArticlepeer-review

73 Scopus citations

Abstract

Angle-resolved and angle-integrated synchrotron-radiation photoemission together with scanning tunneling microscopy (STM) were used to study the Sb-stabilized GaSb(100)-(1×3) surface grown by molecular-beam epitaxy. Bulk valence bands were mapped out in the Γ-Δ-X direction. The deconvoluted Sb 4d and Ga 3d core-level line shapes were used to construct a structural model for the surface. STM resolved the individual atomic dimers verifying the proposed model and showed partial disorder inherent on this surface.
Original languageEnglish GB
Pages (from-to)12619
Number of pages1
JournalPhysical Review B
Volume41
Issue number18
DOIs
StatePublished - 1990

ASJC Scopus subject areas

  • Condensed Matter Physics

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