Photoemission and scanning-tunneling-microscopy study of GaSb(100)

G. E. Franklin; D. H. Rich; A. Samsavar; E. S. Hirschorn; F. M. Leibsle; T. Miller; T. C. Chiang

doi:10.1103/PhysRevB.41.12619

Photoemission and scanning-tunneling-microscopy study of GaSb(100)

G. E. Franklin, D. H. Rich, A. Samsavar, E. S. Hirschorn, F. M. Leibsle, T. Miller, T. C. Chiang

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

Angle-resolved and angle-integrated synchrotron-radiation photoemission together with scanning tunneling microscopy (STM) were used to study the Sb-stabilized GaSb(100)-(1×3) surface grown by molecular-beam epitaxy. Bulk valence bands were mapped out in the - X direction. The deconvoluted Sb 4d and Ga 3d core-level line shapes were used to construct a structural model for the surface. STM resolved the individual atomic dimers verifying the proposed model and showed partial disorder inherent on this surface.

Original language	English
Pages (from-to)	12619-12627
Number of pages	9
Journal	Physical Review B
Volume	41
Issue number	18
DOIs	https://doi.org/10.1103/PhysRevB.41.12619
State	Published - 1 Jan 1990
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.41.12619

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abstract = "Angle-resolved and angle-integrated synchrotron-radiation photoemission together with scanning tunneling microscopy (STM) were used to study the Sb-stabilized GaSb(100)-(1×3) surface grown by molecular-beam epitaxy. Bulk valence bands were mapped out in the - X direction. The deconvoluted Sb 4d and Ga 3d core-level line shapes were used to construct a structural model for the surface. STM resolved the individual atomic dimers verifying the proposed model and showed partial disorder inherent on this surface.",

author = "Franklin, {G. E.} and Rich, {D. H.} and A. Samsavar and Hirschorn, {E. S.} and Leibsle, {F. M.} and T. Miller and Chiang, {T. C.}",

year = "1990",

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doi = "10.1103/PhysRevB.41.12619",

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AU - Franklin, G. E.

AU - Rich, D. H.

AU - Samsavar, A.

AU - Hirschorn, E. S.

AU - Leibsle, F. M.

AU - Miller, T.

AU - Chiang, T. C.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - Angle-resolved and angle-integrated synchrotron-radiation photoemission together with scanning tunneling microscopy (STM) were used to study the Sb-stabilized GaSb(100)-(1×3) surface grown by molecular-beam epitaxy. Bulk valence bands were mapped out in the - X direction. The deconvoluted Sb 4d and Ga 3d core-level line shapes were used to construct a structural model for the surface. STM resolved the individual atomic dimers verifying the proposed model and showed partial disorder inherent on this surface.

AB - Angle-resolved and angle-integrated synchrotron-radiation photoemission together with scanning tunneling microscopy (STM) were used to study the Sb-stabilized GaSb(100)-(1×3) surface grown by molecular-beam epitaxy. Bulk valence bands were mapped out in the - X direction. The deconvoluted Sb 4d and Ga 3d core-level line shapes were used to construct a structural model for the surface. STM resolved the individual atomic dimers verifying the proposed model and showed partial disorder inherent on this surface.

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JO - Physical Review B

JF - Physical Review B

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ER -

Photoemission and scanning-tunneling-microscopy study of GaSb(100)

Abstract

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