Photoemission and scanning-tunneling-microscopy study of GaSb(100)

G. E. Franklin; D. H. Rich; A. Samsavar; E. S. Hirschorn; F. M. Leibsle; T. Miller; T. C. Chiang

doi:10.1103/PhysRevB.41.12619

Photoemission and scanning-tunneling-microscopy study of GaSb(100)

G. E. Franklin
, D. H. Rich
, A. Samsavar
, E. S. Hirschorn
, F. M. Leibsle
, T. Miller
, T. C. Chiang

Research output: Contribution to journal › Article › peer-review

74 Scopus citations

Abstract

Angle-resolved and angle-integrated synchrotron-radiation photoemission together with scanning tunneling microscopy (STM) were used to study the Sb-stabilized GaSb(100)-(1×3) surface grown by molecular-beam epitaxy. Bulk valence bands were mapped out in the - X direction. The deconvoluted Sb 4d and Ga 3d core-level line shapes were used to construct a structural model for the surface. STM resolved the individual atomic dimers verifying the proposed model and showed partial disorder inherent on this surface.

Original language	English
Pages (from-to)	12619-12627
Number of pages	9
Journal	Physical Review B
Volume	41
Issue number	18
DOIs	https://doi.org/10.1103/PhysRevB.41.12619
State	Published - 1 Jan 1990
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.41.12619

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title = "Photoemission and scanning-tunneling-microscopy study of GaSb(100)",

abstract = "Angle-resolved and angle-integrated synchrotron-radiation photoemission together with scanning tunneling microscopy (STM) were used to study the Sb-stabilized GaSb(100)-(1×3) surface grown by molecular-beam epitaxy. Bulk valence bands were mapped out in the - X direction. The deconvoluted Sb 4d and Ga 3d core-level line shapes were used to construct a structural model for the surface. STM resolved the individual atomic dimers verifying the proposed model and showed partial disorder inherent on this surface.",

author = "Franklin, \{G. E.\} and Rich, \{D. H.\} and A. Samsavar and Hirschorn, \{E. S.\} and Leibsle, \{F. M.\} and T. Miller and Chiang, \{T. C.\}",

year = "1990",

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doi = "10.1103/PhysRevB.41.12619",

language = "English",

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T1 - Photoemission and scanning-tunneling-microscopy study of GaSb(100)

AU - Franklin, G. E.

AU - Rich, D. H.

AU - Samsavar, A.

AU - Hirschorn, E. S.

AU - Leibsle, F. M.

AU - Miller, T.

AU - Chiang, T. C.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - Angle-resolved and angle-integrated synchrotron-radiation photoemission together with scanning tunneling microscopy (STM) were used to study the Sb-stabilized GaSb(100)-(1×3) surface grown by molecular-beam epitaxy. Bulk valence bands were mapped out in the - X direction. The deconvoluted Sb 4d and Ga 3d core-level line shapes were used to construct a structural model for the surface. STM resolved the individual atomic dimers verifying the proposed model and showed partial disorder inherent on this surface.

AB - Angle-resolved and angle-integrated synchrotron-radiation photoemission together with scanning tunneling microscopy (STM) were used to study the Sb-stabilized GaSb(100)-(1×3) surface grown by molecular-beam epitaxy. Bulk valence bands were mapped out in the - X direction. The deconvoluted Sb 4d and Ga 3d core-level line shapes were used to construct a structural model for the surface. STM resolved the individual atomic dimers verifying the proposed model and showed partial disorder inherent on this surface.

UR - https://www.scopus.com/pages/publications/0008567282

U2 - 10.1103/PhysRevB.41.12619

DO - 10.1103/PhysRevB.41.12619

M3 - Article

AN - SCOPUS:0008567282

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VL - 41

SP - 12619

EP - 12627

JO - Physical Review B

JF - Physical Review B

IS - 18

ER -

Photoemission and scanning-tunneling-microscopy study of GaSb(100)

Abstract

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