Abstract
The electro-photoinduced disappearance of Al from the surface of chalcogenide glassy film in Ni-As2Se3-Al and Ni-As 2S3-Al structures has been investigated. Induced diffusion of Al into chalcogenide films has not been revealed, and Al disappearance is shown to be due to photo-electroinduced oxidation of the Al layer in the humid air atmosphere. Al oxidation begins in the form of an island-like process. The phenomenon of polarized photodoping, characteristic of As2S 3-Ag structures, was not observed in the Ni-As2S 3-Al samples.
Original language | English |
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Pages (from-to) | 121-127 |
Number of pages | 7 |
Journal | Physica B: Condensed Matter |
Volume | 348 |
Issue number | 1-4 |
DOIs | |
State | Published - 1 May 2004 |
Keywords
- Chalcogenide film/metal structures
- Chalcogenide glassy films
- Photoinduced phenomena
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering