Photoinduced phenomena in chalcogenide glassy film/Al structures

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3 Scopus citations


The electro-photoinduced disappearance of Al from the surface of chalcogenide glassy film in Ni-As2Se3-Al and Ni-As 2S3-Al structures has been investigated. Induced diffusion of Al into chalcogenide films has not been revealed, and Al disappearance is shown to be due to photo-electroinduced oxidation of the Al layer in the humid air atmosphere. Al oxidation begins in the form of an island-like process. The phenomenon of polarized photodoping, characteristic of As2S 3-Ag structures, was not observed in the Ni-As2S 3-Al samples.

Original languageEnglish
Pages (from-to)121-127
Number of pages7
JournalPhysica B: Condensed Matter
Issue number1-4
StatePublished - 1 May 2004


  • Chalcogenide film/metal structures
  • Chalcogenide glassy films
  • Photoinduced phenomena

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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