Photoinduced reflectance anisotropy in chalcogenide glassy semiconductors

V. Lyubin; A. V. Kolobov; T. Yasuda; M. Klebanov; L. Boehm; K. Tanaka

doi:10.1016/S0022-3093(98)00152-5

Photoinduced reflectance anisotropy in chalcogenide glassy semiconductors

V. Lyubin, A. V. Kolobov, T. Yasuda, M. Klebanov, L. Boehm, K. Tanaka

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Photoinduced anisotropy (PA) in films and bulk samples of chalcogenide glasses As₂S₃, As₅₀Se₅₀ and Ge₂₀As₂₀S₆₀ has been studied in a wide spectral range (1.5 to 5.5 eV) using reflectance difference spectroscopy (RDS). PA was observed in the energy range much exceeding the energy of inducing photons and also in the range 4.5-5.5 eV energies greater than band gap energy for our samples. The sign of reflectance anisotropy induced by the near-band-gap light was shown to be opposite at smaller and larger energies. The conclusion is made that not only defects and scattering centers but also interatomic covalent bonds can be oriented and reoriented with linearly polarized light. A model of redistribution between bonding and lone-pair electrons is proposed.

Original language	English
Pages (from-to)	677-681
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	227-230
Issue number	PART 2
DOIs	https://doi.org/10.1016/S0022-3093(98)00152-5
State	Published - 1 Jan 1998

Keywords

Anisotropy
Polarized light
Spectroscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/S0022-3093(98)00152-5

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title = "Photoinduced reflectance anisotropy in chalcogenide glassy semiconductors",

abstract = "Photoinduced anisotropy (PA) in films and bulk samples of chalcogenide glasses As2S3, As50Se50 and Ge20As20S60 has been studied in a wide spectral range (1.5 to 5.5 eV) using reflectance difference spectroscopy (RDS). PA was observed in the energy range much exceeding the energy of inducing photons and also in the range 4.5-5.5 eV energies greater than band gap energy for our samples. The sign of reflectance anisotropy induced by the near-band-gap light was shown to be opposite at smaller and larger energies. The conclusion is made that not only defects and scattering centers but also interatomic covalent bonds can be oriented and reoriented with linearly polarized light. A model of redistribution between bonding and lone-pair electrons is proposed.",

keywords = "Anisotropy, Polarized light, Spectroscopy",

author = "V. Lyubin and Kolobov, {A. V.} and T. Yasuda and M. Klebanov and L. Boehm and K. Tanaka",

note = "Funding Information: This work, partly supported by NEDO, was performed in the Joint Research Center for Atom Technology (JRCAT) under the joint research agreement between the National Institute for Advanced Interdisciplinary Research (NAIR) and the Angstrom Technology Partnership (ATP) and also in the Ben-Gurion University of the Negev. V.L. and M.K. are grateful to the Israel Science Foundation for financial support.",

year = "1998",

month = jan,

day = "1",

doi = "10.1016/S0022-3093(98)00152-5",

language = "English",

volume = "227-230",

pages = "677--681",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

number = "PART 2",

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TY - JOUR

T1 - Photoinduced reflectance anisotropy in chalcogenide glassy semiconductors

AU - Lyubin, V.

AU - Kolobov, A. V.

AU - Yasuda, T.

AU - Klebanov, M.

AU - Boehm, L.

AU - Tanaka, K.

N1 - Funding Information: This work, partly supported by NEDO, was performed in the Joint Research Center for Atom Technology (JRCAT) under the joint research agreement between the National Institute for Advanced Interdisciplinary Research (NAIR) and the Angstrom Technology Partnership (ATP) and also in the Ben-Gurion University of the Negev. V.L. and M.K. are grateful to the Israel Science Foundation for financial support.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Photoinduced anisotropy (PA) in films and bulk samples of chalcogenide glasses As2S3, As50Se50 and Ge20As20S60 has been studied in a wide spectral range (1.5 to 5.5 eV) using reflectance difference spectroscopy (RDS). PA was observed in the energy range much exceeding the energy of inducing photons and also in the range 4.5-5.5 eV energies greater than band gap energy for our samples. The sign of reflectance anisotropy induced by the near-band-gap light was shown to be opposite at smaller and larger energies. The conclusion is made that not only defects and scattering centers but also interatomic covalent bonds can be oriented and reoriented with linearly polarized light. A model of redistribution between bonding and lone-pair electrons is proposed.

AB - Photoinduced anisotropy (PA) in films and bulk samples of chalcogenide glasses As2S3, As50Se50 and Ge20As20S60 has been studied in a wide spectral range (1.5 to 5.5 eV) using reflectance difference spectroscopy (RDS). PA was observed in the energy range much exceeding the energy of inducing photons and also in the range 4.5-5.5 eV energies greater than band gap energy for our samples. The sign of reflectance anisotropy induced by the near-band-gap light was shown to be opposite at smaller and larger energies. The conclusion is made that not only defects and scattering centers but also interatomic covalent bonds can be oriented and reoriented with linearly polarized light. A model of redistribution between bonding and lone-pair electrons is proposed.

KW - Anisotropy

KW - Polarized light

KW - Spectroscopy

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U2 - 10.1016/S0022-3093(98)00152-5

DO - 10.1016/S0022-3093(98)00152-5

M3 - Article

AN - SCOPUS:0032065073

SN - 0022-3093

VL - 227-230

SP - 677

EP - 681

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

Photoinduced reflectance anisotropy in chalcogenide glassy semiconductors

Abstract

Keywords

ASJC Scopus subject areas

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