Photoreflectance characterization of the space charge region in semiconductors: indium tin oxide on InP as a model system

R. N. Bhattacharya, H. Shen, P. Parayanthal, Fred H. Pollak, T. Coutts, H. Aharoni

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

We investigated the photoreflectance spectra from the space charge region of the model device system indium tin oxide (ITO) on p-InP as a function of reversed d.c. bias Vbias. The period of the observed Franz-Keldvsh oscillations (FKOs) provides a direct optical measure of the surface d.c. electric field ξs. This observation is in contrast with previous electromodulation studies in which the FKOs were related to the modulating a.c. field. From a plot of ξs2 as a function of Vbias we obtained the built-in potential (-0.4 ± 0.1 V) and net carrier concentration. This demonstrates that this technique can be utilized as an optical Mott-Schottky method. The value of the built-in potential is lower than that obtained from previously reported Fermi level pinning studies.

Original languageEnglish
Pages (from-to)371-377
Number of pages7
JournalSolar Cells
Volume21
Issue number1-4
DOIs
StatePublished - 1 Jan 1987
Externally publishedYes

ASJC Scopus subject areas

  • Engineering (all)

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