Photoresponse of n-ZnO/p-Si heterojunction towards ultraviolet/visible lights: thickness dependent behavior

S. Mridha; M. Dutta; Durga Basak

doi:10.1007/s10854-008-9628-y

Photoresponse of n-ZnO/p-Si heterojunction towards ultraviolet/visible lights: thickness dependent behavior

S. Mridha, M. Dutta, Durga Basak

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

A series of n-ZnO/p-Si thin film heterojunctions have been fabricated by a low cost sol-gel technique for different ZnO film thicknesses and the dark as well as photo current-voltage (I-V) characteristics have been investigated in details. The heterojunction with ZnO thickness of 0.46 um shows the best diode characteristics in terms of rectification ratio, I_F/I_R = 5.7 × 10³ at 5 V and reverse leakage current density, J _R = 7.6 ×10^-5 A cm^-2 at -5 V. From the photo I-V curves and wavelength dependent photocurrent of the heterojunctions, it is found that the junction with 0.46 μm ZnO thickness shows the highest sensitivity towards both UV and visible lights.

Original language	English
Pages (from-to)	S376-S379
Journal	Journal of Materials Science: Materials in Electronics
Volume	20
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1007/s10854-008-9628-y
State	Published - 1 Jan 2009
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Photoresponse of n-ZnO/p-Si heterojunction towards ultraviolet/visible lights: thickness dependent behavior",

abstract = "A series of n-ZnO/p-Si thin film heterojunctions have been fabricated by a low cost sol-gel technique for different ZnO film thicknesses and the dark as well as photo current-voltage (I-V) characteristics have been investigated in details. The heterojunction with ZnO thickness of 0.46 um shows the best diode characteristics in terms of rectification ratio, IF/IR = 5.7 × 103 at 5 V and reverse leakage current density, J R = 7.6 ×10-5 A cm-2 at -5 V. From the photo I-V curves and wavelength dependent photocurrent of the heterojunctions, it is found that the junction with 0.46 μm ZnO thickness shows the highest sensitivity towards both UV and visible lights.",

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T1 - Photoresponse of n-ZnO/p-Si heterojunction towards ultraviolet/visible lights

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AU - Mridha, S.

AU - Dutta, M.

AU - Basak, Durga

PY - 2009/1/1

Y1 - 2009/1/1

N2 - A series of n-ZnO/p-Si thin film heterojunctions have been fabricated by a low cost sol-gel technique for different ZnO film thicknesses and the dark as well as photo current-voltage (I-V) characteristics have been investigated in details. The heterojunction with ZnO thickness of 0.46 um shows the best diode characteristics in terms of rectification ratio, IF/IR = 5.7 × 103 at 5 V and reverse leakage current density, J R = 7.6 ×10-5 A cm-2 at -5 V. From the photo I-V curves and wavelength dependent photocurrent of the heterojunctions, it is found that the junction with 0.46 μm ZnO thickness shows the highest sensitivity towards both UV and visible lights.

AB - A series of n-ZnO/p-Si thin film heterojunctions have been fabricated by a low cost sol-gel technique for different ZnO film thicknesses and the dark as well as photo current-voltage (I-V) characteristics have been investigated in details. The heterojunction with ZnO thickness of 0.46 um shows the best diode characteristics in terms of rectification ratio, IF/IR = 5.7 × 103 at 5 V and reverse leakage current density, J R = 7.6 ×10-5 A cm-2 at -5 V. From the photo I-V curves and wavelength dependent photocurrent of the heterojunctions, it is found that the junction with 0.46 μm ZnO thickness shows the highest sensitivity towards both UV and visible lights.

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JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - SUPPL. 1

ER -

Photoresponse of n-ZnO/p-Si heterojunction towards ultraviolet/visible lights: thickness dependent behavior

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