Photothermal effect in narrow band gap PbTe semiconductor

Z. Dashevsky; V. Kasiyan; S. Asmontas; J. Gradauskas; E. Shirmulis; E. Flitsiyan; L. Chernyak

doi:10.1063/1.3243081

Photothermal effect in narrow band gap PbTe semiconductor

Z. Dashevsky, V. Kasiyan, S. Asmontas, J. Gradauskas, E. Shirmulis, E. Flitsiyan, L. Chernyak

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this paper we report the observation of photothermal effect in PbTe p-n junction. The effect is expressed in photosignal generation due to illumination by 100 ns pulse CO₂ laser with photon energy less than PbTe forbidden gap.

Original language	English
Article number	076105
Journal	Journal of Applied Physics
Volume	106
Issue number	7
DOIs	https://doi.org/10.1063/1.3243081
State	Published - 23 Oct 2009

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Photothermal effect in narrow band gap PbTe semiconductor",

abstract = "In this paper we report the observation of photothermal effect in PbTe p-n junction. The effect is expressed in photosignal generation due to illumination by 100 ns pulse CO2 laser with photon energy less than PbTe forbidden gap.",

author = "Z. Dashevsky and V. Kasiyan and S. Asmontas and J. Gradauskas and E. Shirmulis and E. Flitsiyan and L. Chernyak",

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AU - Dashevsky, Z.

AU - Kasiyan, V.

AU - Asmontas, S.

AU - Gradauskas, J.

AU - Shirmulis, E.

AU - Flitsiyan, E.

AU - Chernyak, L.

PY - 2009/10/23

Y1 - 2009/10/23

N2 - In this paper we report the observation of photothermal effect in PbTe p-n junction. The effect is expressed in photosignal generation due to illumination by 100 ns pulse CO2 laser with photon energy less than PbTe forbidden gap.

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M3 - Article

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VL - 106

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Photothermal effect in narrow band gap PbTe semiconductor

Abstract

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