Photothermal effect in narrow band gap PbTe semiconductor

Z. Dashevsky; V. Kasiyan; S. Asmontas; J. Gradauskas; E. Shirmulis; E. Flitsiyan; L. Chernyak

doi:10.1063/1.3243081

Photothermal effect in narrow band gap PbTe semiconductor

Z. Dashevsky
, V. Kasiyan
, S. Asmontas
, J. Gradauskas
, E. Shirmulis
, E. Flitsiyan
, L. Chernyak

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this paper we report the observation of photothermal effect in PbTe p-n junction. The effect is expressed in photosignal generation due to illumination by 100 ns pulse CO₂ laser with photon energy less than PbTe forbidden gap.

Original language	English
Article number	076105
Journal	Journal of Applied Physics
Volume	106
Issue number	7
DOIs	https://doi.org/10.1063/1.3243081
State	Published - 23 Oct 2009

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.3243081

Cite this

@article{ba2b8db9c5f345e3aede793457eebe50,

title = "Photothermal effect in narrow band gap PbTe semiconductor",

abstract = "In this paper we report the observation of photothermal effect in PbTe p-n junction. The effect is expressed in photosignal generation due to illumination by 100 ns pulse CO2 laser with photon energy less than PbTe forbidden gap.",

author = "Z. Dashevsky and V. Kasiyan and S. Asmontas and J. Gradauskas and E. Shirmulis and E. Flitsiyan and L. Chernyak",

year = "2009",

month = oct,

day = "23",

doi = "10.1063/1.3243081",

language = "English",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Photothermal effect in narrow band gap PbTe semiconductor

AU - Dashevsky, Z.

AU - Kasiyan, V.

AU - Asmontas, S.

AU - Gradauskas, J.

AU - Shirmulis, E.

AU - Flitsiyan, E.

AU - Chernyak, L.

PY - 2009/10/23

Y1 - 2009/10/23

N2 - In this paper we report the observation of photothermal effect in PbTe p-n junction. The effect is expressed in photosignal generation due to illumination by 100 ns pulse CO2 laser with photon energy less than PbTe forbidden gap.

AB - In this paper we report the observation of photothermal effect in PbTe p-n junction. The effect is expressed in photosignal generation due to illumination by 100 ns pulse CO2 laser with photon energy less than PbTe forbidden gap.

UR - https://www.scopus.com/pages/publications/70350090628

U2 - 10.1063/1.3243081

DO - 10.1063/1.3243081

M3 - Article

AN - SCOPUS:70350090628

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 076105

ER -

Photothermal effect in narrow band gap PbTe semiconductor

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this