Abstract
A method is presented for use in manufacture of a semiconductor device, such as a photovoltaic cell. The method comprises: providing a structure comprising a ZnO layer; applying a surface treatment to said structure for a certain time period to form a layer of ZnS on said ZnO layer; and depositing an active structure on said ZnS layer. The active structure may be a light absorbing structure, including a light absorbing semiconductor or a molecular light absorbing dye. The provision of the ZnS buffer layer between the ZnO layer and the active structure improves the device performance.
Original language | English |
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Patent number | US 2013098440 A1 |
State | Published - 2013 |