Photovoltaic properties of fullerene (C60) thin films

F. A. Katz; D. Faiman; S. Goren; S. Shtutina; A. Shames; B. Mishori; Yoram Shapira

Photovoltaic properties of fullerene (C₆₀) thin films

F. A. Katz, D. Faiman, S. Goren, S. Shtutina, A. Shames, B. Mishori, Yoram Shapira

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

The crystalline structure, Electron Paramagnetic Resonance and Surface Photovoltage (SPV) spectra of C₆₀ thin films and the photovoltaic properties of C₆₀/Ag and C₆₀/Si interfaces are reported. The SPV spectra of C₆₀ films, C₆₀/Ag and C₆₀/Si interfaces are presented and analyzed on the basis of a model of C₆₀ film electron structure including mobility gap, band tails extending into the gap and two deep level states in the gap. I-V characteristics of the C₆₀/Ag and the C₆₀/p-Si interfaces were measured. Both device structures are shown to exhibit rectifying behavior in the dark and photovoltaic properties. The solar cell parameters are presented.

Original language	English
Pages (from-to)	113-118
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	485
State	Published - 1 Jan 1998
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: 2 Dec 1997 → 5 Dec 1997

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{d1911f4cc9d74a068a31829f8a125c74,

title = "Photovoltaic properties of fullerene (C60) thin films",

abstract = "The crystalline structure, Electron Paramagnetic Resonance and Surface Photovoltage (SPV) spectra of C60 thin films and the photovoltaic properties of C60/Ag and C60/Si interfaces are reported. The SPV spectra of C60 films, C60/Ag and C60/Si interfaces are presented and analyzed on the basis of a model of C60 film electron structure including mobility gap, band tails extending into the gap and two deep level states in the gap. I-V characteristics of the C60/Ag and the C60/p-Si interfaces were measured. Both device structures are shown to exhibit rectifying behavior in the dark and photovoltaic properties. The solar cell parameters are presented.",

author = "Katz, {F. A.} and D. Faiman and S. Goren and S. Shtutina and A. Shames and B. Mishori and Yoram Shapira",

year = "1998",

month = jan,

day = "1",

language = "English",

volume = "485",

pages = "113--118",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 02-12-1997 Through 05-12-1997",

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TY - JOUR

T1 - Photovoltaic properties of fullerene (C60) thin films

AU - Katz, F. A.

AU - Faiman, D.

AU - Goren, S.

AU - Shtutina, S.

AU - Shames, A.

AU - Mishori, B.

AU - Shapira, Yoram

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The crystalline structure, Electron Paramagnetic Resonance and Surface Photovoltage (SPV) spectra of C60 thin films and the photovoltaic properties of C60/Ag and C60/Si interfaces are reported. The SPV spectra of C60 films, C60/Ag and C60/Si interfaces are presented and analyzed on the basis of a model of C60 film electron structure including mobility gap, band tails extending into the gap and two deep level states in the gap. I-V characteristics of the C60/Ag and the C60/p-Si interfaces were measured. Both device structures are shown to exhibit rectifying behavior in the dark and photovoltaic properties. The solar cell parameters are presented.

AB - The crystalline structure, Electron Paramagnetic Resonance and Surface Photovoltage (SPV) spectra of C60 thin films and the photovoltaic properties of C60/Ag and C60/Si interfaces are reported. The SPV spectra of C60 films, C60/Ag and C60/Si interfaces are presented and analyzed on the basis of a model of C60 film electron structure including mobility gap, band tails extending into the gap and two deep level states in the gap. I-V characteristics of the C60/Ag and the C60/p-Si interfaces were measured. Both device structures are shown to exhibit rectifying behavior in the dark and photovoltaic properties. The solar cell parameters are presented.

UR - http://www.scopus.com/inward/record.url?scp=0031621077&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031621077

SN - 0272-9172

VL - 485

SP - 113

EP - 118

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 2 December 1997 through 5 December 1997

ER -

Photovoltaic properties of fullerene (C₆₀) thin films

Abstract

ASJC Scopus subject areas

UN SDGs

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