Physical and engineering aspects of passively Q-switched microlasers

Yehoshua Kalisky

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The issue of microlasers and micro-chip laser devices, passively Q-switched and doped with rare earth lasing ions is well established. The various components of such monolithic lasers are diffusion-bonded to the gain medium or alternatively separated. Laser performance of several configurations based on various hosting crystals, as well as analytical modeling of the Q-switching process will be presented and discussed. The effect of various types of Q-switches on the laser performance will be presented and analyzed.

Original languageEnglish
Title of host publicationSolid State Lasers XIX
Subtitle of host publicationTechnology and Devices
DOIs
StatePublished - 7 May 2010
Externally publishedYes
EventSolid State Lasers XIX: Technology and Devices - San Francisco, CA, United States
Duration: 24 Jan 201028 Jan 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7578
ISSN (Print)0277-786X

Conference

ConferenceSolid State Lasers XIX: Technology and Devices
Country/TerritoryUnited States
CitySan Francisco, CA
Period24/01/1028/01/10

Keywords

  • Diffusion bonding
  • Microchip lasers
  • Passively Q-switching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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