Piezoelectric coefficients of multilayer Pb(Zr,Ti)O3 thin films

S. Muensit; P. Sukwisut; P. Khaenamkeaw; S. B. Lang

doi:10.1007/s00339-008-4602-3

Piezoelectric coefficients of multilayer Pb(Zr,Ti)O₃ thin films

S. Muensit, P. Sukwisut, P. Khaenamkeaw, S. B. Lang

Department of Chemical Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Sol-gel techniques were used to prepare thin films of Pb(Zr _x ,Ti_1-x )O₃ (PZT) with three different Zr/Ti ratios and a graded PZT film with three different compositional layers. A Michelson interferometer was used to measure the thickness strains due to an applied ac electric field. Effective d ₃₃ piezoelectric strain coefficients were computed from the experimental data. Interfacial pinning caused these coefficients to differ from the true ones. They were corrected for the pinning using both an analytical model and finite-element analysis. The corrected coefficients of the PZT (52/48) sample were in excellent agreement with values of bulk materials. The coefficients of the multilayer sample were very low, probably due to insufficient poling or domain switching.

Original language	English
Pages (from-to)	659-663
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	92
Issue number	3
DOIs	https://doi.org/10.1007/s00339-008-4602-3
State	Published - 1 Aug 2008

ASJC Scopus subject areas

Chemistry (all)
Materials Science (all)

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abstract = "Sol-gel techniques were used to prepare thin films of Pb(Zr x ,Ti1-x )O3 (PZT) with three different Zr/Ti ratios and a graded PZT film with three different compositional layers. A Michelson interferometer was used to measure the thickness strains due to an applied ac electric field. Effective d 33 piezoelectric strain coefficients were computed from the experimental data. Interfacial pinning caused these coefficients to differ from the true ones. They were corrected for the pinning using both an analytical model and finite-element analysis. The corrected coefficients of the PZT (52/48) sample were in excellent agreement with values of bulk materials. The coefficients of the multilayer sample were very low, probably due to insufficient poling or domain switching.",

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AU - Muensit, S.

AU - Sukwisut, P.

AU - Khaenamkeaw, P.

AU - Lang, S. B.

PY - 2008/8/1

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N2 - Sol-gel techniques were used to prepare thin films of Pb(Zr x ,Ti1-x )O3 (PZT) with three different Zr/Ti ratios and a graded PZT film with three different compositional layers. A Michelson interferometer was used to measure the thickness strains due to an applied ac electric field. Effective d 33 piezoelectric strain coefficients were computed from the experimental data. Interfacial pinning caused these coefficients to differ from the true ones. They were corrected for the pinning using both an analytical model and finite-element analysis. The corrected coefficients of the PZT (52/48) sample were in excellent agreement with values of bulk materials. The coefficients of the multilayer sample were very low, probably due to insufficient poling or domain switching.

AB - Sol-gel techniques were used to prepare thin films of Pb(Zr x ,Ti1-x )O3 (PZT) with three different Zr/Ti ratios and a graded PZT film with three different compositional layers. A Michelson interferometer was used to measure the thickness strains due to an applied ac electric field. Effective d 33 piezoelectric strain coefficients were computed from the experimental data. Interfacial pinning caused these coefficients to differ from the true ones. They were corrected for the pinning using both an analytical model and finite-element analysis. The corrected coefficients of the PZT (52/48) sample were in excellent agreement with values of bulk materials. The coefficients of the multilayer sample were very low, probably due to insufficient poling or domain switching.

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Piezoelectric coefficients of multilayer Pb(Zr,Ti)O₃ thin films

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