Planar silicon light emitting sources in standard 1.2 and 2 micron CMOS technology

Lukas W. Snyman, Herzl Aharoni, Monuko Du Plessis, Johannes K. Marais

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

Complementary metal oxide semiconductor (CMOS) technology was used to fabricate planar silicon light emitting sources with high electrical-to-optical conversion efficiency. The design was chosen to reduce the breakdown voltage of the device and increase prevailing electric field and light emission in avalanching regions during breakdown. Analysis suggested that the use of CMOS technology enabled on-chip integration of Si light sources with active elements to yield efficient silicon based electrooptical integrated circuits.

Original languageEnglish
PagesI108-I109
StatePublished - 1 Dec 2001
Externally publishedYes
Event4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan
Duration: 15 Jul 200119 Jul 2001

Conference

Conference4th Pacific Rim Conference on Lasers and Electro-Optics
Country/TerritoryJapan
CityChiba
Period15/07/0119/07/01

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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