Abstract
Complementary metal oxide semiconductor (CMOS) technology was used to fabricate planar silicon light emitting sources with high electrical-to-optical conversion efficiency. The design was chosen to reduce the breakdown voltage of the device and increase prevailing electric field and light emission in avalanching regions during breakdown. Analysis suggested that the use of CMOS technology enabled on-chip integration of Si light sources with active elements to yield efficient silicon based electrooptical integrated circuits.
Original language | English |
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Pages | I108-I109 |
State | Published - 1 Dec 2001 |
Externally published | Yes |
Event | 4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan Duration: 15 Jul 2001 → 19 Jul 2001 |
Conference
Conference | 4th Pacific Rim Conference on Lasers and Electro-Optics |
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Country/Territory | Japan |
City | Chiba |
Period | 15/07/01 → 19/07/01 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering