Abstract
This work shows the progress and demonstrates the measurements performed via a unique submicron scanning system developed at the VLSI systems center in Ben-Gurion University. The system enables the combination of near-field optical and atomic force microscopy measurements with the standard electronic analysis. The obtained signal, i.e., the electrical outcome at each point as a function of the spot position provides a 2D signal map of the pixel response, representing the full 3D charge distribution in the device. This work present the results obtained by thorough scanning of several various pixel topologies of CMOS APS chips fabricated in two different CMOS technologies (the standard 0.5μm and 0.35μm CMOS technologies). We demonstrate that our system use enables a detailed, point by point, quantitative determination of the contributions to the total output signal from each particular region of the pixel. It makes possible to understand the influence of the each component composing the pixel (e.g., logic transistors, metal lines, etc.) which is extremely important for CMOS APS where the pixel structure defines a fill factor of less then 100%.
Original language | English |
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Pages (from-to) | 232-241 |
Number of pages | 10 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5301 |
DOIs | |
State | Published - 1 Dec 2004 |
Event | Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications V - San Jose, CA, United States Duration: 19 Jan 2004 → 21 Jan 2004 |
Keywords
- CMOS APS
- Crosstalk
- Photoresponse
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering