Polarized-cathodoluminescence study of uniaxial and biaxial stress in GaAs/Si

D. H. Rich, A. Ksendzov, R. W. Terhune, F. J. Grunthaner, B. A. Wilson, H. Shen, M. Dutta, S. M. Vernon, T. M. Dixon

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


The strain-induced splitting of the heavy-hole (hh) and light-hole (lh) valence bands for 4-m-thick GaAs/Si is examined on a microscopic scale using linear polarized-cathodoluminescence imaging and spectroscopy. The energies and intensities of the hh- and lh-exciton luminescence are quantitatively analyzed to determine spatial variations in the stress tensor. The results indicate that regions near and far from the microcracks are primarily subject to uniaxial and biaxial tensile stresses, respectively. The transition region where biaxial stress gradually converts to uniaxial stress is analyzed, and reveals a mixing of lh and hh characters in the strain-split bands.

Original languageEnglish
Pages (from-to)6836-6839
Number of pages4
JournalPhysical Review B
Issue number8
StatePublished - 1 Jan 1991
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics


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