Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111)

Keyphrases

• Polarized Light 100%
• Si(111) 100%
• Polarization Anisotropy 100%
• Quantum Dot Ensemble 100%
• Exciton Recombination 100%
• Pair Excitation 100%
• Quantum Dots 66%
• High Temperature 33%
• Poisson Equation 33%
• Low Temperature 33%
• Molecular Beam Epitaxy 33%
• Three-dimensional (3D) 33%
• High Energy 33%
• Thermal Stress 33%
• Multiple Layers 33%
• Selectivity Control 33%
• Theoretical Modeling 33%
• Wave Function 33%
• Local Control 33%
• Energy Quantum 33%
• Cathodoluminescence 33%
• Anisotropy 33%
• Effective Mass 33%
• Schrödinger Equation 33%
• Cl 2 33%
• Thermal Excitation 33%
• Method for Calculation 33%
• Si Substrate 33%
• Coefficient of Thermal Expansion 33%
• Growth Temperature 33%
• Axial Stress 33%
• Hole State 33%
• As-grown 33%
• Self-consistent Solution 33%
• Transition Energy 33%
• Vertically Stacked 33%
• AlN Film 33%
• Inductively Coupled 33%
• III-nitrides 33%
• Quasi-Fermi Levels 33%
• Excitation Density 33%
• Excitonic Transition 33%
• Polarized Luminescence 33%
• Nitride Films 33%
• Biaxial Tensile Stress 33%
• State Filling 33%
• Reactive Ion Etching 33%
• Ar Plasma 33%

Material Science

• Anisotropy 100%
• Quantum Dot 100%
• Aluminum Nitride 100%
• Film 50%
• Density 25%
• Ultimate Tensile Strength 25%
• Luminescence 25%
• Molecular Beam Epitaxy 25%
• Thermal Expansion 25%
• Nitride Compound 25%
• Thermal Stress 25%
• Theoretical Modeling 25%
• Cathodoluminescence 25%
• Reactive Ion Etching 25%

Physics

• Anisotropy 100%
• Polarized Light 100%
• Quantum Dot 100%
• Molecular Beam Epitaxy 25%
• Cathodoluminescence 25%
• Nitride 25%
• Ultimate Tensile Strength 25%
• Poisson Equation 25%
• Thermal Stress 25%
• Thermal Expansion 25%