POLUCHENIE I NEKOTORYE SVOISTVA PLENOK TVERDYKH RASTVOROV SISTEMY Bi//2Te//3// minus //xSe//x.

Z. M. Dashevskii; T. M. Erusalimskaya; Ya A. Kaller; N. V. Kolomoets; T. E. Soboleva

POLUCHENIE I NEKOTORYE SVOISTVA PLENOK TVERDYKH RASTVOROV SISTEMY Bi//2Te//3// minus //xSe//x.

Translated title of the contribution: Synthesis and Certain Properties of Films of Solid Solutions of the Bi₂Te_{3 -} _xSe_x System.

Z. M. Dashevskii, T. M. Erusalimskaya, Ya A. Kaller, N. V. Kolomoets, T. E. Soboleva

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

It is shown that films of solid solutions of the Bi//2Te//3// minus //xSe//x system with a composition close to the initial composition can be synthesized by the method of discrete vaporization with homogenization of the vapor phase before condensation. Single-crystal films of solid solutions of the Bi//2Te//3// minus //xSe//x system have been synthesized under optimal spraying and annealing conditions. A study is made of the effect of the annealing temperature and the Te content in the initial material on the current carrier concentration and mobility. It is shown that an increase in the annealing temperature to above 375 degree C leads to revaporization of Te and precipitation of it into the second phase.

Translated title of the contribution	Synthesis and Certain Properties of Films of Solid Solutions of the Bi₂Te_{3 -} _xSe_x System.
Original language	Russian
Pages (from-to)	963-965
Number of pages	3
Journal	Izv Akad Nauk SSSR Neorg Mater
Volume	13
Issue number	6
State	Published - 1 Jan 1977

ASJC Scopus subject areas

Engineering (all)

Cite this

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title = "POLUCHENIE I NEKOTORYE SVOISTVA PLENOK TVERDYKH RASTVOROV SISTEMY Bi//2Te//3// minus //xSe//x.",

abstract = "It is shown that films of solid solutions of the Bi//2Te//3// minus //xSe//x system with a composition close to the initial composition can be synthesized by the method of discrete vaporization with homogenization of the vapor phase before condensation. Single-crystal films of solid solutions of the Bi//2Te//3// minus //xSe//x system have been synthesized under optimal spraying and annealing conditions. A study is made of the effect of the annealing temperature and the Te content in the initial material on the current carrier concentration and mobility. It is shown that an increase in the annealing temperature to above 375 degree C leads to revaporization of Te and precipitation of it into the second phase.",

author = "Dashevskii, {Z. M.} and Erusalimskaya, {T. M.} and Kaller, {Ya A.} and Kolomoets, {N. V.} and Soboleva, {T. E.}",

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AU - Dashevskii, Z. M.

AU - Erusalimskaya, T. M.

AU - Kaller, Ya A.

AU - Kolomoets, N. V.

AU - Soboleva, T. E.

PY - 1977/1/1

Y1 - 1977/1/1

N2 - It is shown that films of solid solutions of the Bi//2Te//3// minus //xSe//x system with a composition close to the initial composition can be synthesized by the method of discrete vaporization with homogenization of the vapor phase before condensation. Single-crystal films of solid solutions of the Bi//2Te//3// minus //xSe//x system have been synthesized under optimal spraying and annealing conditions. A study is made of the effect of the annealing temperature and the Te content in the initial material on the current carrier concentration and mobility. It is shown that an increase in the annealing temperature to above 375 degree C leads to revaporization of Te and precipitation of it into the second phase.

AB - It is shown that films of solid solutions of the Bi//2Te//3// minus //xSe//x system with a composition close to the initial composition can be synthesized by the method of discrete vaporization with homogenization of the vapor phase before condensation. Single-crystal films of solid solutions of the Bi//2Te//3// minus //xSe//x system have been synthesized under optimal spraying and annealing conditions. A study is made of the effect of the annealing temperature and the Te content in the initial material on the current carrier concentration and mobility. It is shown that an increase in the annealing temperature to above 375 degree C leads to revaporization of Te and precipitation of it into the second phase.

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M3 - מאמר

AN - SCOPUS:0017503075

SN - 0002-337X

VL - 13

SP - 963

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JO - Izv Akad Nauk SSSR Neorg Mater

JF - Izv Akad Nauk SSSR Neorg Mater

IS - 6

ER -

POLUCHENIE I NEKOTORYE SVOISTVA PLENOK TVERDYKH RASTVOROV SISTEMY Bi//2Te//3// minus //xSe//x.

Abstract

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