Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation by AlxTi1?xO Based Gate Stack Engineering

Sayak Dutta Gupta, Ankit Soni, Vipin Joshi, Jeevesh Kumar, Rudrarup Sengupta, Heena Khand, Bhawani Shankar, Nagaboopathy Mohan, Srinivasan Raghavan, Navakanta Bhat, Mayank Shrivastava

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

In this paper, for the first time, we have experimentally demonstrated enhancement mode (e-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-Type high-\kappa {\mathrm {Al}}-{x}{\mathrm {Ti}}-{1-x} O based gate stack. Concentration of Al in Al-Ti-O system was found to be a tuning parameter for the threshold voltage of GaN HEMTs. The high-\kappa properties of {\mathrm {Al}}-{x}{\mathrm {Ti}}-{1-x} O as a function of Al % are studied. Superiority of AlTiO over other p-oxides such as CuO and NiOx is proven statistically. Using the high-\kappa and p-Type AlTiO, in conjunction with a thinner AlGaN barrier under gate, 600-V e-mode GaN HEMTs are demonstrated with superior ON-state performance ( \text{I}-{ \mathrm{\scriptscriptstyle ON}}~\sim ~400 mA/mm and \text{R}-{ \mathrm{\scriptscriptstyle ON}} ={8.9}\,\,\Omega -mm) and gate control over channel ( \text{I}-{ \mathrm{\scriptscriptstyle ON}}/\text{I}-{ \mathrm{\scriptscriptstyle OFF}} = {10}^{{7}} , SS = 73 mV/dec, and gate leakage <200 nA/mm), beside improved safe operating area reliability.

Original languageEnglish
Article number8692728
Pages (from-to)2544-2550
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume66
Issue number6
DOIs
StatePublished - 1 Jun 2019
Externally publishedYes

Keywords

  • AlTiO gate
  • energy band engineering
  • enhancement mode (e-mode) AlGaN/GaN high-electron-mobility transistors (HEMTs)
  • p-Type metal oxide
  • ternary oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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