Abstract
The orthorhombic α-PbO2 phase of FeNbO4 was prepared and its photoelectronic properties measured: Sintered disks were shown to be n type and gave a resistivity of 40 Ω-cm. Measurements of the photoresponse gave a flat-band potential between 0.1 and 0.4 V vs SCE at a pH of 8.5 and an optical band gap of 2.08(2) eV. Several higher-energy band gaps at 2.68(2), 2.94(2), 3.24(2), and 4.38(2) eV were also determined. There appears to be an enhancement of the quantum efficiency due to the presence of [FeO6] active centers while retaining the fundamental characteristics of the [NbO6] octahedra.
Original language | English |
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Pages (from-to) | 128-132 |
Number of pages | 5 |
Journal | Journal of Solid State Chemistry |
Volume | 35 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jan 1980 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Physical and Theoretical Chemistry
- Inorganic Chemistry
- Materials Chemistry