The orthorhombic α-PbO2 phase of FeNbO4 was prepared and its photoelectronic properties measured: Sintered disks were shown to be n type and gave a resistivity of 40 Ω-cm. Measurements of the photoresponse gave a flat-band potential between 0.1 and 0.4 V vs SCE at a pH of 8.5 and an optical band gap of 2.08(2) eV. Several higher-energy band gaps at 2.68(2), 2.94(2), 3.24(2), and 4.38(2) eV were also determined. There appears to be an enhancement of the quantum efficiency due to the presence of [FeO6] active centers while retaining the fundamental characteristics of the [NbO6] octahedra.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Physical and Theoretical Chemistry
- Inorganic Chemistry
- Materials Chemistry