Preparation and photoelectronic properties of FeNbO4

John Koenitzer, Bijan Khazai, Jacob Hormadaly, Robert Kershaw, Kirby Dwight, Aaron Wold

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35 Scopus citations


The orthorhombic α-PbO2 phase of FeNbO4 was prepared and its photoelectronic properties measured: Sintered disks were shown to be n type and gave a resistivity of 40 Ω-cm. Measurements of the photoresponse gave a flat-band potential between 0.1 and 0.4 V vs SCE at a pH of 8.5 and an optical band gap of 2.08(2) eV. Several higher-energy band gaps at 2.68(2), 2.94(2), 3.24(2), and 4.38(2) eV were also determined. There appears to be an enhancement of the quantum efficiency due to the presence of [FeO6] active centers while retaining the fundamental characteristics of the [NbO6] octahedra.

Original languageEnglish
Pages (from-to)128-132
Number of pages5
JournalJournal of Solid State Chemistry
Issue number1
StatePublished - 1 Jan 1980
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry
  • Materials Chemistry


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